S29GL01GS10DFIV13 datasheet(22/108 Pages) CYPRESS

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Document Number: 001-98285 Rev. *R

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S29GL01GS/S29GL512S

S29GL256S/S29GL128S

5.2.2

Incremental Programming

The same word location may be programmed more than once, by either the Word or Write Buffer Programming methods, to

incrementally change 1’s to 0’s. Note that if additional programming is performed on a page its ECC coverage is disabled.

5.3

Automatic ECC

5.3.1

ECC Overview

The Automatic ECC feature works transparently with normal program, erase, and read operations. As the device transfers each

Page of data from the Write Buffer is to the memory array, internal ECC logic programs ECC Code for the Page into a portion of the

memory array that is not visible to the host system. The device evaluates the Page data and the ECC Code during each initial Page

access. If needed, the internal ECC logic corrects a one bit error during the initial access.

Programming more than once to a particular Page will disable the ECC function for that Page. The ECC function will remain disabled

for that Page until the next time the host system erases the Sector containing that Page. The host system may read data stored in

that Page following multiple programming operations; however, ECC is disabled and an error in that Page will not be detected or

corrected.

5.3.2

Program and Erase Summary

For performance and reliability reasons, GL-S devices perform reading and programming on full 32-byte Pages in parallel. The GL-S

device provides ECC on each Page by adding an ECC Code to each Page when it is first programmed. The ECC Code is automatic

and transparent to the host system.

5.3.3

ECC Implementation

Each 32-byte Page in the main flash array and OTP regions features an associated ECC Code. The ECC Code, in combination with

ECC logic, is able to detect and correct any single bit error found in a Page during a read access.

The first Write Buffer program operation applied to a Page programs the ECC Code for that Page. Subsequent programming

operations that occur more than once on a particular Page disable the ECC function for that Page. This allows bit or word

programming; however, note that multiple programming operations to the same Page will disable the ECC function on the Page

where incremental programming occurs. An erase of the Sector containing a Page with ECC disabled will re-enable the ECC

function for that Page.

The ECC function is automatic and transparent to the user. The transparency of the Automatic ECC function enhances data integrity

for typical programming operations that write data once to each Page. The ECC function also facilitates software compatibility to

previous generations of GL Family products by allowing single word programming and bit walking where the same Page or word is

programmed more than once. When a Page has Automatic ECC disabled, the ECC function will not detect or correct an error on a

data read from that Page.

5.3.4

Word Programming

Word programming programs a single word anywhere in the main Flash Memory Array. Programming multiple words in the same

32-byte page disables Automatic ECC protection on that Page. A sector erase of the sector containing that Page will re-enable

Automatic ECC following word programming on that Page.

5.3.5

Write Buffer Programming

Each Write Buffer Program operation allows for programming of 1 bit up to 512 bytes. A 32-byte Page is the smallest program

granularity that features Automatic ECC protection. Programming the same Page more than once will disable the Automatic ECC on

that Page. Cypress recommends that a Write Buffer programming operation program multiple Pages in an operation and write each

Page only once. This keeps the Automatic ECC protection enabled on each Page. For the very best performance, program in full

Lines of 512 bytes aligned on 512-byte boundaries.

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