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ADS54J40 Datasheet(PDF) 6 Page - Texas Instruments |
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ADS54J40 Datasheet(HTML) 6 Page - Texas Instruments |
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6 / 88 page ![]() 6 ADS54J20 SBAS766B – MAY 2016 – REVISED JANUARY 2017 www.ti.com Product Folder Links: ADS54J20 Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated (1) SYSREF must be applied for the device to initialize; see the SYSREF Signal section for details. (2) After power-up, always use a hardware reset to reset the device for the first time; see Table 65 for details. (3) Operating 0.5 dB below the maximum-supported amplitude is recommended to accommodate gain mismatch in interleaving ADCs. (4) At high frequencies, the maximum supported input amplitude reduces; see Figure 36 for details. (5) See Table 10 and Table 12. (6) Prolonged use above the nominal junction temperature can increase the device failure-in-time (FIT) rate. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) (1) (2) MIN NOM MAX UNIT Supply voltage range AVDD3V 2.85 3.0 3.6 V AVDD 1.8 1.9 2.0 DVDD 1.7 1.9 2.0 IOVDD 1.1 1.15 1.2 Analog inputs Differential input voltage range 1.9 VPP Input common-mode voltage 2.0 V Maximum analog input frequency for a 1.9-VPP input amplitude(3)(4) 400 MHz Clock inputs Input clock frequency, device clock frequency 250(5) 1000 MHz Input clock amplitude differential (VCLKP – VCLKM) Sine wave, ac-coupled 0.75 1.5 VPP LVPECL, ac-coupled 0.8 1.6 LVDS, ac-coupled 0.7 Input device clock duty cycle 45% 50% 55% Temperature Operating free-air, TA –40 85 ºC Operating junction, TJ 105(6) 125 (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) ADS54J20 UNIT RMP (VQFNP) 72 PINS RθJA Junction-to-ambient thermal resistance 22.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 5.1 °C/W RθJB Junction-to-board thermal resistance 2.4 °C/W ψJT Junction-to-top characterization parameter 0.1 °C/W ψJB Junction-to-board characterization parameter 2.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.4 °C/W |
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