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MB9AF112LMA Datasheet(PDF) 103 Page - SPANSION |
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MB9AF112LMA Datasheet(HTML) 103 Page - SPANSION |
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103 / 121 page  D a t a S h e e t 100 MB9A110A-DS706-00011-3v0-E, December 16, 2014 CONFIDENTIAL 7. Flash Memory Write/Erase Characteristics (1) Write / Erase time (Vcc = 2.7V to 5.5V, Ta = - 40°C to + 105°C) Parameter Value Unit Remarks Typ* Max* Sector erase time Large Sector 0.7 3.7 s Includes write time prior to internal erase Small Sector 0.3 1.1 Half word (16 bit) write time 12 384 μs Not including system-level overhead time. Chip erase time 64K/128K/256KByte 5.2 23.6 s Includes write time prior to internal erase 384K/512KByte 8 38.4 s * : The typical value is immediately after shipment, the maximam value is guarantee value under 100,000 cycle of erase/write. (2) Erase/write cycles and data hold time Erase/write cycles (cycle) Data hold time (year) Remarks 1,000 20* 10,000 10* 100,000 5* * : At average + 85C |
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