MB9AF111K datasheet(76/89 Pages) SPANSION

76 / 89 page

D a t a S h e e t

February 20, 2015, MB9A110K-DS706-00030-2v0-E

CONFIDENTIAL

MainFlash Memory Write/Erase Characteristics

(1) Write / Erase time

(Vcc = 2.7V to 5.5V, Ta = - 40°C to + 105°C)

Parameter

Value

Unit

Remarks

Typ*

Max*

Sector erase

time

Large Sector

0.7

3.7

Includes write time prior to internal

erase

Small Sector

0.3

1.1

Half word (16-bit)

write time

384

μs

Not including system-level overhead

time

Chip erase time

3.8

16.2

Includes write time prior to internal

erase

* : The typical value is immediately after shipment, the maximam value is guarantee value under 100,000

cycle of erase/write.

(2) Erase/write cycles and data hold time

Erase/write cycles (cycle)

Data hold time (year)

1,000

20*

10,000

10*

100,000

* : At average + 85C

WorkFlash Memory Write/Erase Characteristics

(1) Write / Erase time

(Vcc = 2.7V to 5.5V, Ta = - 40°C to + 105°C)

Parameter

Value

Unit

Remarks

Typ*

Max*

Sector erase time

0.3

1.5

Includes write time prior to internal

erase

Half word (16-bit)

write time

384

μs

Not including system-level overhead

time

Chip erase time

1.2

Includes write time prior to internal

erase

* : The typical value is immediately after shipment, the maximam value is guarantee value under 10,000 cycle

of erase/write.

(2) Erase/write cycles and data hold time

Erase/write cycles (cycle)

Data hold time (year)

1,000

20*

10,000

10*

* : At average + 85C

MB9AF111K Datasheet(PDF) 76 Page - SPANSION

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