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MMPF0200 Datasheet(PDF) 41 Page - NXP Semiconductors

Part # MMPF0200
Description  12 channel configurable power management integrated circuit
PDF  114 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMPF0200 Datasheet(HTML) 41 Page - NXP Semiconductors

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NXP Semiconductors
41
PF0200
FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS
Figure 12. SW1AB efficiency waveforms
SW1A/B (single phase) (continued)
ISW1ABQ
Quiescent Current
PFM Mode
APS Mode
–
–
18
235
–
–
µA
RONSW1AP
SW1A P-MOSFET RDSON
VINSW1A = 3.3 V
–
215
245
m
Ω
RONSW1AN
SW1A N-MOSFET RDSON
VINSW1A = 3.3 V
–
258
326
m
Ω
ISW1APQ
SW1A P-MOSFET Leakage Current
VINSW1A = 4.5 V
––
7.5
µA
ISW1ANQ
SW1A N-MOSFET Leakage Current
VINSW1A = 4.5 V
––
2.5
µA
RONSW1BP
SW1B P-MOSFET RDSON
VINSW1B = 3.3 V
–
215
245
m
Ω
RONSW1BN
SW1B N-MOSFET RDSON
VINSW1B = 3.3 V
–
258
326
m
Ω
ISW1BPQ
SW1B P-MOSFET Leakage Current
VINSW1B = 4.5 V
––
7.5
µA
ISW1BNQ
SW1B N-MOSFET Leakage Current
VINSW1B = 4.5 V
––
2.5
µA
RSW1ABDIS
Discharge Resistance
–
600
–
Ω
Notes
40.
Accuracy specification is inclusive of load and line regulation.
41.
Current rating of SW1AB supports the Power Virus mode of operation of the i.MX6X processor.
Table 47. SW1A/B electrical characteristics (continued)
All parameters are specified at Consumer TA = -40 to 85 °C and Extended Industrial TA = -40 to 105 °C, VIN = VINSW1x = 3.6 V, VSW1AB
= 1.2 V, ISW1AB = 100 mA, SW1AB_PWRSTG[2:0] = [111], typical external component values, fSW1AB = 2.0 MHz, unless otherwise noted.
Typical values are characterized at VIN = VINSW1x = 3.6 V, VSW1AV = 1.2 V, ISW1AB = 100 mA, SW1AB_PWRSTG[2:0] = [111], and 25 °C,
unless otherwise noted.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Notes
0
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
1000
Ef
fi
ci
e
n
cy
(%
)
Load Current (mA)
PFM - Vout = 1.2V
APS - Vout = 1.2V
PWM - Vout = 1.2v
SW1AB single phase



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