MMPF0200 datasheet(47/114 Pages) NXP

47 / 114 page

NXP Semiconductors

PF0200

FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

ηSW2

Efficiency

•VIN = 3.6 V, fSW2 = 2.0 MHz, LSW2 = 1.0 μH

PFM, 3.15 V, 1.0 mA

PFM, 3.15 V, 50 mA

APS, PWM, 3.15 V, 400 mA

APS, PWM, 3.15 V, 600 mA

APS, PWM, 3.15 V, 1000 mA

APS, PWM, 3.15 V, 1500 mA

–

Switch mode supply SW2 (continued)

ΔVSW2

Output Ripple

–

VSW2LIR

Line Regulation (APS, PWM)

–

VSW2LOR

DC Load Regulation (APS, PWM)

–

VSW2LOTR

Transient Load Regulation

• Transient load = 0.0 mA to 1.0 A, di/dt = 100 mA/

μs

Overshoot

Undershoot

–

ISW2Q

Quiescent Current

PFM Mode

APS Mode (Low output voltage settings)

APS Mode (High output voltage settings)

–

145

305

–

µA

RONSW2P

SW2 P-MOSFET RDSON

at VIN = VINSW2 = 3.3 V

–

190

209

RONSW2N

SW2 N-MOSFET RDSON

at VIN = VINSW2 = 3.3 V

–

212

255

ISW2PQ

SW2 P-MOSFET Leakage Current

VIN = VINSW2 = 4.5 V

––

µA

ISW2NQ

SW2 N-MOSFET Leakage Current

VIN = VINSW2 = 4.5 V

––

4.0

µA

RSW2DIS

Discharge Resistance

–

600

–

Notes

44.

When output is set to > 2.6 V the output will follow the input down when VIN gets near 2.8 V.

45.

Accuracy specification is inclusive of load and line regulation.

46.

The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation:

(VINSW2 - VSW2) = ISW2* (DCR of Inductor +RONSW2P + PCB trace resistance).

Table 56. SW2 electrical characteristics (continued)

All parameters are specified at Consumer TA = -40 to 85 °C and Extended Industrial TA = -40 to 105 °C, VIN = VINSW2 = 3.6 V, VSW2 =

3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], typical external component values, fSW2 = 2.0 MHz, unless otherwise noted. Typical

values are characterized at VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], and 25 °C, unless

otherwise noted.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Notes

MMPF0200 Datasheet(PDF) 47 Page - NXP Semiconductors

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