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MMPF0200 Datasheet(PDF) 60 Page - NXP Semiconductors |
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MMPF0200 Datasheet(HTML) 60 Page - NXP Semiconductors |
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60 / 114 page ![]() 60 NXP Semiconductors PF0200 FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS 6.4.5.2 SWBST external components 6.4.5.3 SWBST specifications Table 73. SWBST external component requirements Components Description Values CINBST(53) SWBST input capacitor 10 μF CINBSTHF(53) SWBST decoupling input capacitor 0.1 μF COBST(53) SWBST output capacitor 2 x 22 μF LSBST SWBST inductor 2.2 μH DBST SWBST boost diode 1.0 A, 20 V Schottky Notes 53. Use X5R or X7R capacitors. Table 74. SWBST electrical specifications All parameters are specified at Consumer TA = -40 to 85 °C and Extended Industrial TA = -40 to 105 °C, VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, typical external component values, fSWBST = 2.0 MHz, otherwise noted. Typical values are characterized at VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, and 25 °C, unless otherwise noted. Symbol Parameters Min. Typ. Max. Units Notes Switch mode supply SWBST VINSWBST Input Voltage Range 2.8 – 4.5 V VSWBST Nominal Output Voltage – Table 72 –V VSWBSTACC Output Voltage Accuracy 2.8 V ≤ VIN ≤ 4.5 V 0 < ISWBST < ISWBSTMAX -4.0 – 3.0 % ΔVSWBST Output Ripple 2.8 V ≤ VIN ≤ 4.5 V 0 < ISWBST < ISWBSTMAX, excluding reverse recovery of Schottky diode – – 120 mV Vp-p VSWBSTLOR DC Load Regulation 0 < ISWBST < ISWBSTMAX –0.5 – mV/mA VSWBSTLIR DC Line Regulation 2.8 V ≤ VIN ≤ 4.5 V, ISWBST = ISWBSTMAX – 50 – mV ISWBST Continuous Load Current 2.8 V ≤ VIN ≤ 3.0 V 3.0 V ≤ VIN ≤ 4.5 V – – – – 500 600 mA ISWBSTQ Quiescent Current AUTO – 222 289 μA RDSONBST MOSFET on Resistance – 206 306 m Ω ISWBSTLIM Peak Current Limit 1400 2200 3200 mA (54) VSWBSTOSH Start-up Overshoot ISWBST = 0.0 mA –– 500 mV VSWBSTTR Transient Load Response ISWBST from 1.0 to 100 mA in 1.0 µs Maximum transient Amplitude –– 300 mV VSWBSTTR Transient Load Response ISWBST from 100 to 1.0 mA in 1.0 µs Maximum transient Amplitude –– 300 mV |
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