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STM32WB55CC Datasheet(PDF) 74 Page - STMicroelectronics |
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STM32WB55CC Datasheet(HTML) 74 Page - STMicroelectronics |
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74 / 165 page ![]() Electrical characteristics STM32WB55xx 74/165 DS11929 Rev 3 6.3 Operating conditions 6.3.1 Summary of main performance 6.3.2 General operating conditions Table 21. Main performance at VDD = 3.3 V Parameter Test conditions Typ Unit ICORE Core current consumption VBAT (VBAT = 1.8 V, VDD = 0 V) 0.002 µA Shutdown (VDD = 1.8 V) 0.013 Standby (VDD = 1.8 V, 32 KB RAM retention) 0.320 Stop2 1.85 Sleep (16 MHz) 740 LP run (2 MHz) 320 Run (64 MHz) 5000 Radio RX TBD Radio TX 0 dBm output power TBD IPERI Peripheral current consumption BLE Advertising (Tx = 0 dBm; Period 1.28 s; 31 Bytes, 3 channels) TBD Advertising Connected mode (Tx = 0 dBm, 6 Bytes; period 300 ms, 3 channels) TBD LP timers - TBD I2C3 - TBD LPUART - TBD RTC - 0.450 Table 22. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 64 MHz fPCLK1 Internal APB1 clock frequency - 0 64 fPCLK2 Internal APB2 clock frequency - 0 64 VDD Standard operating voltage - 1.71(1) 3.6 V VDDA Analog supply voltage ADC or COMP used 1.62 3.6 VREFBUF used 2.4 ADC, COMP, VREFBUF not used 0 VBAT Backup operating voltage - 1.55 3.6 |
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