STM32WB55CC datasheet(100/165 Pages) STMICROELECTRONICS

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Table 46. Current consumption in VBAT mode

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VBAT 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 125 °C 0 °C 25 °C 40 °C 55 °C 85 °C 105 °C 125 °C

IDD(VBAT)

Backup

domain

supply

current

RTC disabled

1.8 V 1.00 2.00

4.00

10.0

52.0

145

370

2.4 V 1.00 2.00

5.00

12.0

60.0

165

425

3.0 V 2.00 4.00

7.00

16.0

75.0

225

725

3.6 V 7.00 15.0

23.0

42.0

170

450

1150

RTC enabled

and clocked

by LSE

quartz(2)

1.8 V 295

305

315

325

380

480

720

2.4 V 385

395

400

415

475

595

870

3.0 V 495

505

515

530

600

765

1300

3.6 V 630

645

660

685

830

1150

1850

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

Table 47. Current under Reset condition

Symbol

Conditions

TYP

MAX(1)

Unit

0 °C

25 °C

40 °C

55 °C

85 °C

105 °C 125 °C

0 °C

25 °C

40 °C

55 °C

85 °C

105 °C 125 °C

IDD(RST)

1.8 V

TBD

2.4 V

TBD

3.0 V

TBD

3.6 V

TBD

1. Guaranteed by characterization results, unless otherwise specified.

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