STM32WB55CC datasheet(109/165 Pages) STMICROELECTRONICS

109 / 165 page

DS11929 Rev 3

109/165

STM32WB55xx

Electrical characteristics

152

Figure 18. Typical application with a 32.768 kHz crystal

Note:

An external resistor is not required between OSC32_IN and OSC32_OUT, and it is

forbidden to add one.

6.3.11

Internal clock source characteristics

The parameters given in Table 55 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 22: General operating

conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 55. HSI16 oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI16

HSI16 Frequency

VDD=3.0 V, TA=30 °C

15.88

16.08

MHz

TRIM

HSI16 user trimming step

Trimming code is not a

multiple of 64

0.2

0.3

0.4

Trimming code is a

multiple of 64

-4

-6

-8

DuCy(HSI16)(2) Duty Cycle

∆Temp(HSI16)

HSI16 oscillator frequency drift over

temperature

TA= 0 to 85 °C

-1

TA= -40 to 125 °C

-2

1.5

∆VDD(HSI16)

HSI16 oscillator frequency drift over

VDD

VDD=1.62 V to 3.6 V

-0.1

0.05

tsu(HSI16)(2)

HSI16 oscillator start-up time

0.8

1.2

μs

tstab(HSI16)(2) HSI16 oscillator stabilization time

IDD(HSI16)(2)

HSI16 oscillator power consumption

155

190

μA

1. Guaranteed by characterization results.

2. Guaranteed by design.

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