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STM32WB55CC Datasheet(PDF) 138 Page - STMicroelectronics |
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STM32WB55CC Datasheet(HTML) 138 Page - STMicroelectronics |
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138 / 165 page ![]() Electrical characteristics STM32WB55xx 138/165 DS11929 Rev 3 Iline_reg Line regulation 2.8 V ≤ VDDA ≤ 3.6 V Iload = 500 µA - 200 1000 ppm/V Iload = 4 mA - 100 500 Iload_reg Load regulation 500 μA ≤ Iload ≤4 mA Normal mode - 50 500 ppm/mA TCoeff Temperature coefficient -40 °C < TJ < +125 °C - - Tcoeff_ vrefint + 50 ppm/ °C 0 °C < TJ < +50 °C - - Tcoeff_ vrefint + 50 PSRR Power supply rejection DC 40 60 - dB 100 kHz 25 40 - tSTART Start-up time CL = 0.5 µF(4) -300 350 µs CL = 1.1 µF(4) -500 650 CL = 1.5 µF(4) -650 800 IINRUSH Control of maximum DC current drive on VREFBUF_OUT during start-up phase (5) -- - 8 - mA IDDA (VREFBUF) VREFBUF consumption from VDDA Iload = 0 µA - 16 25 µA Iload = 500 µA - 18 30 Iload = 4 mA - 35 50 1. Guaranteed by design, unless otherwise specified. 2. In degraded mode, the voltage reference buffer cannot maintain accurately the output voltage that will follow (VDDA - drop voltage). 3. Guaranteed by test in production. 4. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise. 5. To correctly control the VREFBUF in-rush current during start-up phase and scaling change, the VDDA voltage must be in the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1. Table 79. VREFBUF characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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