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DP8496 Datasheet(PDF) 75 Page - National Semiconductor (TI) |
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DP8496 Datasheet(HTML) 75 Page - National Semiconductor (TI) |
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75 / 92 page ![]() 70 AC Specifications (Continued) 711 BUFFER MEMORY DYNAMIC RAM READWRITE TLF11212 – 45 Timing parameter descriptions and specifications are shown on next page Note 1 This diagram shows a fast page mode type operation Normal one transfer operation would not have multiple CAS cycles and associated column address and data changes as shown here Note 2 RAS may be asserted on either edge of BCLK Note 3 WR remains deasserted during a read operation Note 4 ADB2 is used for 16-bit mode only Note 5 Transition edges shown in dashed line would occur in the normal mode (non fast page mode) transfers Note 6 For a Read operation the last waveform is not used For a Write operation the second from last waveform is not used 75 |
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