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MCT8317A Datasheet(PDF) 20 Page - Texas Instruments |
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MCT8317A Datasheet(HTML) 20 Page - Texas Instruments |
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20 / 161 page  8.3.6 Cross Conduction (Dead Time) The device is fully protected against any cross conduction of the MOSFETs. The high-side and low-side MOSFETs are carefully controlled to avoid any shoot-through events by inserting a dead time (tdead). This is implemented by sensing the gate-source voltage (VGS) of the high-side and low-side MOSFETs and ensuring that the VGS of high-side MOSFET has reached below turn-off levels before switching on the low-side MOSFET of same half-bridge as shown in Figure 8-6 and Figure 8-7 and vice versa. VM OUTx GND Gate Control Gate Control VGS VGS VGS_HS VGS_LS t DEAD Figure 8-6. Cross Conduction Protection OUTx HS OUTx LS OUTx Gate (VGS_HS) OUTx Gate (VHS_LS) tDEAD Time 10% 10% Figure 8-7. Dead Time MCT8317A SLLSFQ2 – JANUARY 2023 www.ti.com 20 Submit Document Feedback Copyright © 2023 Texas Instruments Incorporated Product Folder Links: MCT8317A |
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