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MPC8358E Datasheet(PDF) 17 Page - Freescale Semiconductor, Inc |
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MPC8358E Datasheet(HTML) 17 Page - Freescale Semiconductor, Inc |
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17 / 96 page ![]() MPC8358E PowerQUICC™ II Pro Processor Revision 2.1 PBGA Silicon Hardware Specifications, Rev. 1 Freescale Semiconductor 17 DDR and DDR2 SDRAM 6 DDR and DDR2 SDRAM This section describes the DC and AC electrical specifications for the DDR and DDR2 SDRAM interface of the MPC8358E. 6.1 DDR and DDR2 SDRAM DC Electrical Characteristics Table 12 provides the recommended operating conditions for the DDR2 SDRAM component(s) of the device when GVDD(typ) = 1.8 V. SPI (master/slave) 10 (max) 10 20 UCC through TDM 50 (max) 70 8 × F2 MCC 25 (max) 16.67 16 × F2, 4 UTOPIA L2 50 (max) 800 2 × F2 POS-PHY L2 50 (max) 800 2 × F2 HDLC Bus 10 (max) 10 20 HDLC/Transparent 50 (max) 50 8/3 × F2, 3 UART/Async HDLC 3.68 (max internal ref clock) 115 (Kbps) 20 BISYNC 2 (max) 2 20 USB 48 (ref clock) 12 96 Note: 1. The QE needs to run at a frequency higher than or equal to what is listed in this table. 2. ‘F’ is the actual interface operating frequency. 3. The bit rate limit is independent of the data bus width (i.e. the same for serial, nibble, or octal interfaces). 4. TDM in high-speed mode for serial data interface. Table 12. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V Parameter/Condition Symbol Min Max Unit Notes I/O supply voltage GVDD 1.71 1.89 V 1 I/O reference voltage MVREF 0.49 × GVDD 0.51 × GVDD V2 I/O termination voltage VTT MVREF – 0.04 MVREF + 0.04 V 3 Input high voltage VIH MVREF + 0.125 GVDD + 0.3 V Input low voltage VIL –0.3 MVREF – 0.125 V Output leakage current IOZ —±10 μA4 Output high current (VOUT = 1.420 V) IOH –13.4 — mA Table 11. QE Operating Frequency Limitations (continued) Interface Interface Operating Frequency (MHz) Max interface Bit Rate (Mbps) Min QE Operating Frequency1 (MHz) Notes |
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