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STM32WBA62CG Datasheet(PDF) 132 Page - STMicroelectronics |
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STM32WBA62CG Datasheet(HTML) 132 Page - STMicroelectronics |
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132 / 185 page  Electrical characteristics STM32WBA6xxx 132/185 DS14736 Rev 1 Figure 23. LSE typical application with a crystal Note: No external resistors are required between OSC32_IN and OSC32_OUT, and it is forbidden to add one. In bypass mode the LSE oscillator is switched off, and the input pin OSC32_IN is a standard GPIO. fTOL Frequency tolerance includes initial accuracy, stability over temperature, aging and frequency pulling due to incorrect load capacitance Bluetooth Low Energy -500 - 500 ppm Thread CSL -255 - 255 IDD(LSE) LSE current consumption LSEDRV = medium-low drive capability - 450 - nA LSEDRV = medium-high drive capability - 590 - LSEDRV = high drive capability - 700 - Gmcritmax Maximum critical crystal Gm LSEDRV = medium-low drive capability - - 0.75 µA/V LSEDRV = medium-high drive capability - - 1.70 LSEDRV = high drive capability - - 2.70 CS_PARA Internal stray parasitic capacitance(3) -- 3 - pF tSU(LSE) Startup time(4) VDD is stabilized - 2 - s 1. Specified by design, not tested in production. 2. For information on selecting the crystal, refer to AN2867 ‘Oscillator design guide for STM8AF/AL/S, STM32 MCUs and MPUs”. 3. CS_PARA is the equivalent capacitance seen by the crystal due to OSC32_IN and OSC32_OUT internal parasitic capacitances. 4. Time measured from when the LSE is enabled by software, until a stable LSE oscillation is reached. This value is measured for a standard crystal, and can vary significantly with the crystal used. Table 62. LSE oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit MS30253V2 OSC32_IN OSC32_OUT Drive programmable amplifier fLSE 32.768 kHz resonator Resonator with integrated capacitors CL1 CL2 |
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