STM32WBA62CGF6 datasheet(102/185 Pages) STMICROELECTRONICS

102 / 185 page

Electrical characteristics

STM32WBA6xxx

102/185

DS14736 Rev 1

5.3

Operating conditions

5.3.1

Summary of main performance

5.3.2

General operating conditions

Table 28. Thermal characteristics

Symbol

Ratings

Value

Unit

TSTG

Storage temperature range

–65 to +150

°C

TJMAX

Maximum junction temperature

140

Table 29. Main performance at VDD = 3.3 V

Parameter

Test conditions

Typ

Unit

IDD

Core current consumption

Standby (64 Kbytes RAM retention)

1.15

µA

Stop 1

9.67

Stop 2

5.30

Sleep (VDD = 3.0 V, 16 MHz)

0.25

Run (100 MHz)

4.40

Radio BLE Rx 1 Mbps(1)

4.26

Radio BLE Tx 0 dBm output power(1)

5.94

IDD

Peripheral

current

consumption

BLE

Advertising using Standby mode(2)

(Tx = 0 dBm; Period 1.28 s; 31 bytes, 3 channels)

13.334

µA

Advertising using Standby mode(2)

(Tx = 0 dBm, 6 bytes; period 10.24 s, 3 channels)

4.544

1. Power consumption including RF subsystem and digital processing.

2. Power consumption integrated over 100 s, including Cortex-M33, 2.4 GHz RADIO subsystem and digital processing.

Table 30. General operating conditions

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Standard operating voltage

VDD GPIO HSLV = 0

1.71(1)

-3.6

VDD GPIO HSLV = 0

2.75

VDDIO2

Supply voltage for PG

I/O port

VDDIO2 GPIO HSLV = 0

1.08

-3.6

VDDIO2 GPIO HSLV = 1

2.75

VDDUSB USB supply voltage

USB used

3.0

3.6

USB not used

VDDSMPS

Supply voltage for internal

SMPS step-down converter

-VDD

STM32WBA62CGF6 Datasheet(PDF) 102 Page - STMicroelectronics

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