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AN2785 Datasheet(PDF) 33 Page - STMicroelectronics |
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AN2785 Datasheet(HTML) 33 Page - STMicroelectronics |
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33 / 51 page ![]() AN2785 Induced turn-on phenomenon Doc ID 14785 Rev 1 33/51 b) By reducing the maximum dVOUT/dt. This reduction can be achieved by increasing the gate resistor value that limits the gate current for the turn ON of the power MOSFET. The drawback is a consequent increase of the switching time, which means dissipating more power during commutations. c) By using a MOSFET/IGBT with a lower Cgd/Cgs (or Cgc/Cge for IGBTs) ratio. This solution is not always the easiest, but it could be the best strategy when the induced turn ON phenomenon is dominant. |
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