STM32WB55CC datasheet(117/165 Pages) STMICROELECTRONICS

117 / 165 page

DS11929 Rev 3

117/165

STM32WB55xx

Electrical characteristics

152

6.3.13

Flash memory characteristics

Table 61. Flash memory characteristics(1)

1. Guaranteed by design.

Symbol

Parameter

Conditions

Typ

Max

Unit

tprog

64-bit programming time

81.7

90.8

µs

tprog_row

One row (64 double word)

programming time

Normal programming

5.2

5.5

Fast programming

3.8

4.0

tprog_page

One page (4 KByte)

programming time

Normal programming

41.8

43.0

Fast programming

30.4

31.0

tERASE

Page (4 KByte) erase time

22.0

24.5

tME

Mass erase time

22.1

25.0

IDD

Average consumption from VDD

Write mode

3.4

Erase mode

3.4

Maximum current (peak)

Write mode

7 (for 6 µs)

Erase mode

7 (for 67 µs)

Table 62. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

1. Guaranteed by characterization results.

Unit

NEND

Endurance

TA = –40 to +105 °C

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

1 kcycle(2) at TA = 125 °C

10 kcycles(2) at TA = 55 °C

10 kcycles(2) at TA = 85 °C

10 kcycles(2) at TA = 105 °C

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