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MMPF0100 Datasheet(PDF) 48 Page - NXP Semiconductors |
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MMPF0100 Datasheet(HTML) 48 Page - NXP Semiconductors |
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48 / 136 page ![]() 48 NXP Semiconductors PF0100 FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS SW1A/B (single/dual phase) (continued) ηSW1AB Efficiency (single phase) •VIN = 3.6 V, fSW1AB = 2.0 MHz, LSW1AB = 1.0 μH • PFM, 0.9 V, 1.0 mA • PFM, 1.2 V, 50 mA • APS, PWM, 1.2 V, 500 mA • APS, PWM, 1.2 V, 750 mA • APS, PWM, 1.2 V, 1250 mA • APS, PWM, 1.2 V, 2500 mA – – – – – – 82 84 86 87 82 71 – – – – – – % ΔVSW1AB Output ripple – 10 – mV VSW1ABLIR Line regulation (APS, PWM) – – 20 mV VSW1ABLOR DC load regulation (APS, PWM) – – 20 mV VSW1ABLOTR Transient load regulation • Transient load = 0 to 1.25 A, di/dt = 100 mA/ μs • Overshoot • Undershoot – – – – 50 50 mV ISW1ABQ Quiescent current • PFM mode • APS mode – – 18 235 – – µA RONSW1AP SW1A P-MOSFET RDS(on) • VINSW1A = 3.3 V – 215 245 m Ω RONSW1AN SW1A N-MOSFET RDS(on) • VINSW1A = 3.3 V – 258 326 m Ω ISW1APQ SW1A P-MOSFET leakage current • VINSW1A = 4.5 V –– 7.5 µA ISW1ANQ SW1A N-MOSFET leakage current • VINSW1A = 4.5 V –– 2.5 µA RONSW1BP SW1B P-MOSFET RDS(on) • VINSW1B = 3.3 V – 215 245 m Ω RONSW1BN SW1B N-MOSFET RDS(on) • VINSW1B = 3.3 V – 258 326 m Ω ISW1BPQ SW1B P-MOSFET leakage current • VINSW1B = 4.5 V –– 7.5 µA ISW1BNQ SW1B N-MOSFET leakage current • VINSW1B = 4.5 V –– 2.5 µA RSW1ABDIS Discharge resistance – 600 – Ω Table 54. SW1A/B/C electrical characteristics (continued) All parameters are specified at TMIN to TMAX (See Table 3), VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], typical external component values, fSW1x = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted. Symbol Parameter Min. Typ. Max. Unit Notes |
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