MMPF0100 datasheet(97/136 Pages) NXP

97 / 136 page

NXP Semiconductors

PF0100

FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

VSNVS DC, LDO

VSNVS

Output voltage

•5.0

μA < ISNVS < 400 μA (OFF)

• 3.20 V < VIN < 4.5 V, VSNVSVOLT[2:0] = 110

• VTL0/VTH < VIN < 4.5 V, VSNVSVOLT[2:0] = [000] - [101]

•5.0

μA < ISNVS < 400 μA (ON)

• 3.20 V < VIN < 4.5 V, VSNVSVOLT[2:0] = 110

• UVDET < VIN < 4.5 V, VSNVSVOLT[2:0] = [000] - [101]

•5

.0 μA < ISNVS < 400 μA (Coin Cell mode)

• 2.84 V < VCOIN < 3.3 V, VSNVSVOLT[2:0] = 110

• 1.8 V < VCOIN < 3.3 V, VSNVSVOLT[2:0] = [000] - [101]

-5.0%

-8.0%

-5.0%

-4.0%

VCOIN-0.04

-8.0%

3.0

1.0 - 1.8

3.0

1.0 - 1.8

–

1.0 - 1.8

7.0%

5.0%

4.0%

VCOIN

7.0%

(77)

VSNVSDROP

Dropout voltage

• VIN = VCOIN = 2.85 V, VSNVSVOLT[2:0] = 110, ISNVS = 400 μA

–

ISNVSLIM

Current limit

• MMPF0100

• VIN > VTH1, VSNVSVOLT[2:0] = 110

• VIN > VTH0, VSNVSVOLT[2:0] = 000 to 101

• VIN < VTL0, VSNVSVOLT[2:0] = 000 to 101

• MMPF0100A

• VIN > VTH1, VSNVSVOLT[2:0] = 110

• VIN > VTH0, VSNVSVOLT[2:0] = 000 to 101

• VIN < VTL0, VSNVSVOLT[2:0] = 000 to 101

750

500

480

1100

500

480

–

5900

3600

6750

4500

μA

VTH0

VIN Threshold (coin cell powered to VIN powered) VIN going high with

valid coin cell

• VSNVSVOLT[2:0] = 000, 001, 010, 011, 100, 101

2.25

2.40

2.55

VTL0

VIN threshold (VIN powered to coin cell powered) VIN going low with

valid coin cell

• VSNVSVOLT[2:0] = 000, 001, 010, 011, 100, 101

2.20

2.35

2.50

VHYST1

VIN threshold hysteresis for VTH1-VTL1

5.0

–

VHYST0

VIN threshold hysteresis for VTH0-VTL0

5.0

–

VSNVSCROSS

Output voltage during crossover

• VSNVSVOLT[2:0] = 110

• VCOIN > 2.9 V

• Switch to LDO: VIN > 2.825 V, ISNVS = 100 μA

• LDO to Switch: VIN < 3.05 V, ISNVS = 100 μA

2.7

–

(80)

VSNVS AC and transient

tONSNVS

Turn-on time (load capacitor, 0.47

μF)

• VIN > UVDET to 90% of VSNVS

• VCOIN = 0.0 V, ISNVS = 5.0 μA

• VSNVSVOLT[2:0] = 000 to 110

–

(78),(79)

VSNVSOSH

Start-up overshoot

• VSNVSVOLT[2:0] = 000 to 110

• ISNVS = 5.0 μA

• dVIN/dt = 50 mV/μs

–40

VSNVSLITR

Transient line response ISNVS = 75% of ISNVSMAX

• 3.2 V < VIN < 4.5 V, VSNVSVOLT[2:0] = 110

• 2.45 V < VIN < 4.5 V, VSNVSVOLT[2:0] = [000] - [101]

–

Table 111. VSNVS electrical characteristics (continued)

All parameters are specified at TMIN to TMAX (See Table 3), VIN = 3.6 V, VSNVS = 3.0 V, ISNVS = 5.0 μA, typical external component values,

unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VSNVS = 3.0 V, ISNVS = 5.0 μA, and 25 °C, unless otherwise

noted.

Symbol

Parameter

Min

Typ

Max

Unit

Notes

MMPF0100 Datasheet(PDF) 97 Page - NXP Semiconductors

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