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MCIMX503CVM8B Datasheet(PDF) 33 Page - NXP Semiconductors

Part # MCIMX503CVM8B
Description  i.MX50 Applications Processors for Consumer Products
PDF  136 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MCIMX503CVM8B Datasheet(HTML) 33 Page - NXP Semiconductors

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Electrical Characteristics
i.MX50 Applications Processors for Consumer Products, Rev. 7
Freescale Semiconductor
33
4.3.2
DDR2 I/O DC Parameters
The DDR2 interface fully complies with JESD79-2E DDR2 JEDEC standard release April, 2008. The
JEDEC LPDDR2 specification (JESD209_2B) supersedes any specification in this document. The
parameters in Table 19 are guaranteed per the operating ranges in Table 11, unless otherwise noted.
Input current (100 K
Ω PD)
IIN
VI = 0
VI=OVDD
——
0.25
36
μA
External pull-up / pull-down
resistor required to overdrive
internal keeper
Rext
—
—
—
47
K
Ω
1 To maintain a valid level, the transitioning edge of the input must sustain a constant slew rate (monotonic) from the current DC
level through to the target DC level, VIL or VIH. Monotonic input transition time is from 0.1ns to 1s. VIL and VIH do not apply
when hysteresis is enabled.
2 Hysteresis of 250 mV is guaranteed overall operating conditions when hysteresis is enabled.
Table 19. DDR2 DC Electrical Characteristics
DC Electrical Characteristics
Symbol
Test
Conditions
MIN
TYP
MAX
Units
High-level output voltage
Voh
—
0.9*ovdd
—
—
V
Low-level output voltage
Vol
—
—
—
0.1*ovdd
V
Output min source current1
1 ovdd=1.7 V; Vout=1.42 V. (Vout-ovdd)/Ioh must be less than 21 Ω for values of Vout between ovdd and ovdd-0.28 V.
Ioh(dc)
—
-7.5
—
—
mA
Output min sink current2
2 ovdd=1.7 V; Vout=280 mV. Vout/Iol must be less than 21 Ω for values of Vout between 0 V and 280 mV.
Iol(dc)
—
7.5
—
—
mA
Input reference voltage
Vref
—
0.49*ovdd
0.5*ovdd
0.51*ovdd
—
DC input high voltage (data pins)
Vihd(dc)
—
Vref+0.125
—
ovdd+0.3
V
DC input low voltage (data pins)
Vild(dc)
—
-0.3
—
Vref-0.125
V
DC input voltage3 (clk pins)
3 Vin(dc) specifies the allowable dc excursion of each differential input.
Vin(dc)
—
-0.3
—
ovdd+0.3
V
DC differential input voltage4
4 Vid(dc) specifies the input differential voltage |Vtr-Vcp| required for switching, where Vtr is the “pure” input level and Vcp is the
“complementary” input level. the minimum value is equal to Vih(dc) - Vil(dc).
Vid(dc)
—
0.25
—
ovdd+0.6
V
Termination voltage5
5 Vtt is expected to track ovdd/2.
Vtt
—
Vref-0.04
Vref
Vref+0.04
—
Input current6 (no pull-up/down)
6 Typ condition: typ model, 1.8 V, and 25 °C. Max condition: BCS model, 1.9 V, and 125 °C. Min condition: WCS model, 1.7 V,
and -40 °C.
Iin
VI = 0
VI=ovdd
—0.07
2
5
360
nA
Tri-state I/O supply current6
Icc-ovdd
VI = ovdd or 0
—
2.3
480
nA
Tri-state 2.5V predrivers supply
current6
Icc-vdd2p5
VI = ovdd or 0
—
6.4
750
nA
Tri-state core supply current6
Icc-vddi
VI = ovdd or 0
—
3.1
720
nA
Table 18. GPIO DC Electrical Characteristics (continued)
DC Electrical Characteristics
Symbol
Test Conditions
MIN
Typ
MAX
Units



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