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MCIMX503CVM8B Datasheet(PDF) 34 Page - NXP Semiconductors

Part # MCIMX503CVM8B
Description  i.MX50 Applications Processors for Consumer Products
PDF  136 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MCIMX503CVM8B Datasheet(HTML) 34 Page - NXP Semiconductors

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i.MX50 Applications Processors for Consumer Products, Rev. 7
Electrical Characteristics
Freescale Semiconductor
34
4.3.3
Low Power DDR2 I/O DC Parameters
The LPDDR2 interface fully complies with JEDEC standard release April, 2008. The parameters in
Table 20 are guaranteed per the operating ranges in Table 11, unless otherwise noted.
4.3.4
Low Power DDR1 I/O DC Parameters
The LPDDR1 interface fully complies with JEDEC standard release April, 2008. The parameters in
Table 21 are guaranteed per the operating ranges in Table 11, unless otherwise noted.
Table 20. LPDDR2 I/O DC Electrical Parameters
DC Electrical Characteristics
Symbol
Test Conditions
MIN
TYP
MAX
Units
High-level output voltage
Voh
—
0.9*ovdd
—
—
V
Low-level output voltage
Vol
—
—
—
0.1*ovdd
V
Input reference voltage
Vref
—
0.49*ovdd
0.5*ovdd
0.51*ovdd
—
DC input high voltage
Vih(dc)
—
Vref+0.13
—
ovdd
V
DC input low voltage
Vil(dc)
—
ovss
—
Vref-0.13
V
Differential input logic high1
1 The single-ended signals need to be within the respective limits (Vih(dc) max, Vil(dc) min) for single-ended signals as well as
the limitations for overshoot and undershoot.
Vih(diff)
—
0.26
—
—
V
Differential input logic low1
Vil(diff)
—
—
—
-0.26
V
Input current (no pull-up/down)
Iin
VI = 0
VI=ovdd
—0.02
1.5
12.8
290
nA
Tri-state I/O supply current2
2 Typ condition: typ model, 1.2V, and 25 °C. Max condition: BCS model, 1.3V, and 125 °C. Min condition: WCS model, 1.14V,
and -40 °C.
Icc-ovdd
VI = ovdd or 0
—
1.85
400
nA
Tri-state 2.5 V predrivers supply
current2
Icc-vdd2p5
VI = ovdd or 0
—
5
700
nA
Tri-state core supply current2
Icc-vddi
VI = ovdd or 0
—
3
700
nA
Pullup/Pulldown impedance
mismatch2
——
-15
—
+15
%
240
Ω unit calibration resolution
—
—
—
—
10
Ω
Table 21. LPDDR1 Mode DC Electrical Characteristics
DC Electrical Characteristics
Symbol
Test Conditions
MIN
TYP
MAX
Units
High-level output voltage
Voh
Ioh=-0.1mA
0.9*ovdd
—
—
V
Low-level output voltage
Vol
Iol=0.1mA
—
—
0.1*ovdd
V
DC input high voltage (data pins)
Vihd(dc)
—
0.7*ovdd
—
ovdd+0.3
V
DC input low voltage (data pins)
Vild(dc)
—
-0.3
—
0.3*ovdd
V
DC input voltage1 (clk pins)
Vin(dc)
—
-0.3
—
ovdd+0.3
V
DC input differential voltage2
Vid(dc)
—
0.4*ovdd
—
ovdd+0.6
V
Input current3 (no pull-up/down)
Iin
VI = 0
VI=ovdd
—0.07
2
5
360
nA
Tri-state I/O supply current3
Icc-ovdd
VI = ovdd or 0
—
2.3
480
nA
Tri-state 2.5V predrivers supply
current3
Icc-vdd2
p5
VI = ovdd or 0
—
5.3
680
nA
Tri-state core supply current3
Icc-vddi
VI = ovdd or 0
—
3.1
720
nA



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