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ISL73141SEHF7/PROTO Datasheet(PDF) 25 Page - Renesas Technology Corp |
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ISL73141SEHF7/PROTO Datasheet(HTML) 25 Page - Renesas Technology Corp |
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25 / 28 page ![]() ISL73141SEH 6. Die and Assembly Characteristics R34DS0012EU0402 Rev.4.2 Page 25 of 27 Feb 23, 2023 6. Die and Assembly Characteristics Table 1. Die and Assembly Related Information Die Information Dimensions 2410µm x 3910µm (95 mils x 154 mils) Thickness: 483µm ±25µm (19 mils ±1 mil) Interface Materials Passivation Oxide/Nitride Total Thickness 24.5 kÅ Top Metallization Top metal/Bond Pad Composition 99.5% Al, 0.5%Cu Process 0.25um CMOS Assembly Information Substrate Potential GND Additional Information Transistor Count 37700 Weight of Packaged Device 0.572 grams (typical) - K14.A package Lid Characteristics Finish: Gold Lid Potential: Connected to package Pin 14 (DGND) |
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