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STM32WBA62CGF6 Datasheet(PDF) 130 Page - STMicroelectronics |
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STM32WBA62CGF6 Datasheet(HTML) 130 Page - STMicroelectronics |
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130 / 185 page ![]() Electrical characteristics STM32WBA6xxx 130/185 DS14736 Rev 1 5.3.10 External clock source characteristics High-speed external clock The high-speed external (HSE32) clock can be supplied with a 32 MHz crystal or a clock source. The devices include internal programmable capacitances that can be used to trim the crystal frequency, to compensate the PCB parasitic one. Table 58. Regulator modes transition times(1) Symbol Parameter Conditions Typ Unit tLDO SMPS to LDO transition time Range 2 21.5 µs Range 1 17.2 tSMPS LDO to SMPS transition time Range 2 21.1 Range 1 20.2 tVOST(2) Range 2 to range 1 LDO 47.3 SMPS 53.9 Range 1 to range 2(3) LDO 39 SMPS 39.8 1. Evaluated by characterization, not tested in production, unless otherwise specified. 2. Time for ACTVOSRDY in PWR_SVMSR to indicate selected new VOS range. 3. VOSRDY remains at 1 on a transition from range 1 to range 2. Table 59. Wake-up time using USART/LPUART(1) Symbol Parameter Typ Max Unit ,tWUUSART tWULPUART Wake-up time needed to calculate the maximum USART/LPUART baudrate needed to wake up from Stop mode when USART/LPUART kernel clock source is HSI16 -tsu(HSI16) max µs 1. Specified by design, not tested in production. Table 60. HSE32 crystal requirements(1) Symbol Parameter Conditions Min Typ Max Unit fHSE Oscillator frequency(2) -- 32 - MHz fTOL Frequency tolerance(3) includes initial accuracy, stability over temperature, aging, and frequency pulling due to incorrect load capacitance Bluetooth Low Energy -50 - 50 ppm IEEE802.15.4 -40 - 40 CL Load capacitance - 8 - 18 pF CO Shunt capacitance - - - 4 ESR Equivalent series resistance - 60 - 150 Ω Cbank Capacitor bank range - 6.6 - 23.6 pF |
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