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STM32WBA62CGF6 Datasheet(PDF) 133 Page - STMicroelectronics |
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STM32WBA62CGF6 Datasheet(HTML) 133 Page - STMicroelectronics |
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133 / 185 page  DS14736 Rev 1 133/185 STM32WBA6xxx Electrical characteristics 169 5.3.11 Internal clock source characteristics The parameters given in the following tables are derived under ambient operating temperature and supply voltage conditions summarized in Table 30. High-speed internal (HSI16) RC oscillator Table 63. LSE external clock bypass mode characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSE_ext External clock source frequency(2) - 32.000 32.768 - kHz fTOL Frequency tolerance includes initial accuracy and stability over temperature Bluetooth Low Energy -500 - 500 ppm Thread CSL -225 - 225 VIL OSC32_IN input low level voltage - - - 0.3 x VDD V VIH OSC32_IN input high level voltage - 0.7 x VDD -- V tw(LSEH) tw(LSEL) OSC32_IN input high or low time for square signal -10 - - µs 1. Specified by design, not tested in production. 2. fLSE = 1/tLSE. Table 64. HSI16 oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI16 Frequency after factory calibration VDD = 3.0 V, TJ = 30 °C calibrated during production 15.92 16 16.08 MHz 1.71 V ≤ VDD ≤ 3.6 V, TJ = -10 to 100 °C(1) 15.84 16 16.16 1.71 V ≤ VDD ≤ 3.6 V, TJ = -40 to 130 °C (1) 15.65 16 16.35 TRIM(2) User trimming step - 18 29 40 kHz DuCyHSI16(2) Duty cycle - 45 - 55 % tsu(HSI16)(2) Startup time - - 2.5 3.6 μs tstab(HSI16)(2) Stabilization time - - 4 6 IDD(HSI16)(2) Power consumption - - 150 210 μA 1. Evaluated by characterization, not tested in production, unless otherwise specified. It does not take into account package and soldering effects. 2. Specified by design, not tested in production. |
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