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STM32WBA62CGF6 Datasheet(PDF) 135 Page - STMicroelectronics |
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STM32WBA62CGF6 Datasheet(HTML) 135 Page - STMicroelectronics |
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135 / 185 page ![]() DS14736 Rev 1 135/185 STM32WBA6xxx Electrical characteristics 169 5.3.13 Flash memory characteristics Jitter(1) RMS cycle-to-cycle jitter Integer mode, VCO = 544 MHz - ±20 - ps Fractional mode, VCO = 544 MHz - ±70 - RMS period jitter Integer mode, VCO = 544 MHz - ±35 - Fractional mode, VCO = 544 MHz - ±45 - Long-term jitter(4) fPLL_IN = 8 MHz Integer mode, VCO = 544 MHz - ±160 - Fractional mode, VCO = 544 MHz - ±170 - IDD(PLL)(1) PLL power consumption on VDD with LDO VCO freq = 100 MHz - 370 - μA VCO freq = 200 MHz - 460 - VCO freq = 336 MHz - 710 - VCO freq = 544 MHz - 1100 - PLL power consumption on VDD with SMPS. VCO freq = 100 MHz, 1 clock output - 260 - μA VCO freq = 100 MHz, 3 clock outputs - 270 - VCO freq = 200 MHz, 1 clock output - 320 - VCO freq = 336 MHz, 1 clock output - 470 - VCO freq = 544 MHz, 1 clock output - 730 - 1. Specified by design, not tested in production. 2. Evaluated by characterization, not tested in production, unless otherwise specified. 3. Lock time is the duration until PLL1RDY flag (2% of final frequency). 4. Measured on 5000 cycles. Table 67. PLL characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 68. Flash memory characteristics Symbol Parameter Conditions Typ Max(1) Unit tprog(2) 128-bit programming time Normal mode 118 118 µs Burst mode 48 48 tprog_page(2) One 8-Kbyte page programming time fAHB = 100 MHz, normal mode 62 - ms fAHB = 100 MHz, burst mode 24.9 - tprog_flash(2) 1-Mbyte programming time fAHB = 100 MHz, normal mode 7930 - fAHB = 100 MHz, burst mode 3180 - tERASE(2) One 8-Kbyte page erase time 10 k endurance cycles 1.5 2.4 100 k endurance cycles(3) 1.7 3.4 tME(2) Mass erase time (1-Mbyte, one bank) 10 k endurance cycles 195 308 Mass erase time (2-Mbyte, two banks) 390 616 |
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