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STM32WBA62CGF6 Datasheet(PDF) 137 Page - STMicroelectronics |
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STM32WBA62CGF6 Datasheet(HTML) 137 Page - STMicroelectronics |
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137 / 185 page ![]() DS14736 Rev 1 137/185 STM32WBA6xxx Electrical characteristics 169 The test results are given in Table 70. They are based on the EMS levels and classes defined in AN1709 “EMC design guide for STM8, STM32 and legacy MCUs”. Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. Good EMC performance is highly dependent on the user application, and the software in particular. Therefore, it is recommended that the user applies EMC software optimization and prequalification tests in relation with the requested EMC level. Software recommendations The software flow must include the management of runaway conditions, such as: • Corrupted program counter • Unexpected reset • Critical data corruption (control registers) Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or on the oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specified values. When an unexpected behavior is detected, the software can be hardened to prevent the occurrence of unrecoverable errors. See AN1015 “Software techniques for improving microcontrollers EMC performance” for more details. Electromagnetic interference (EMI) The electromagnetic field emitted by the device is monitored while a simple application is executed (toggling two LEDs through the I/O ports). This emission test is compliant with the IEC 61967-2 standard, which specifies the test board and the pin loading. Table 70. EMS characteristics(1) Symbol Parameter Conditions Level/Class VFESD Voltage limits to apply on any I/O pin to induce a functional disturbance VDD = 3.3 V, TA = +25 °C, fHCLK1 = 100 MHz, UFQFPN48 conforming to IEC 61000-4-2 3B VEFTB Fast transient voltage burst limits to apply through 100 pF on VDD and VSS pins to induce a functional disturbance VDD = 3.3 V, TA = +25 °C, fHCLK1 = 100 MHz, UFQFPN48 conforming to IEC 61000-4-4 5A 1. Evaluated by characterization, not tested in production, unless otherwise specified. |
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