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STM32WBA62CGF6 Datasheet(PDF) 138 Page - STMicroelectronics

Part # STM32WBA62CGF6
Description  Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M33 with TrustZone , FPU, Bluetooth IEEE802.15.4 radio solution
PDF  185 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32WBA62CGF6 Datasheet(HTML) 138 Page - STMicroelectronics

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Electrical characteristics
STM32WBA6xxx
138/185
DS14736 Rev 1
5.3.15
Electrical sensitivity characteristics
Based on three different tests (ESD, latch-up) using specific measurement methods, the
device is stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Static latch-up
The following complementary static tests are required on three parts to assess the latch-up
performance:
•
a supply overvoltage is applied to each power supply pin
•
a current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 71. EMI characteristics for fHSE = 32 MHz and fHCLK = 100 MHz(1)
Symbol
Parameter
Conditions
Monitored frequency band
Value
Unit
SEMI
Peak
level(2)
VDD = 3.6 V, TA = 25 °C,
UFQFPN48 package
compliant with IEC 61967-2
0.1 MHz to 30 MHz
-
dBµV
30 MHz to 130 MHz
-
130 MHz to 1 GHz
-
1 GHz to 2 GHz
-
Level(3)
EMI level
-
-
1. Evaluated by characterization, not tested in production.
2. Refer to AN1709, “EMI radiated test” section.
3. Refer to AN1709, “EMI level classification” section.
Table 72. ESD absolute maximum ratings(1)
Symbol
Ratings
Conditions
Package
Class
Max
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = 25 °C, conforming to
ANSI/ESDA/JEDEC JS-001
All
2
2000
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
TA = 25 °C, conforming to
ANSI/ESDA/JEDEC JS-002
UFQFPN48
C2a
500
VFQFPN68
Thin WLCSP88
C1
250
UFBGA121
-
-
1. Evaluated by characterization, not tested in production, unless otherwise specified.
Table 73. Electrical sensitivity(1)
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TJ = 130 °C conforming to JESD78E
2



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