STM32WBA62CGF6 datasheet(154/185 Pages) STMICROELECTRONICS

154 / 185 page

Electrical characteristics

STM32WBA6xxx

154/185

DS14736 Rev 1

Figure 29. VREFBUF_OUT versus temperature (VRS = 000)

TCoeff

Temperature

coefficient

–40 °C < TJ < +130 °C

Tcoeff_vrefint

+ 50

ppm/

°C

PSRR

Power supply

rejection

100 kHz

tSTART

Startup time

CL = 0.5 µF

110

200

µs

CL = 1.1 µF

240

350

CL = 1.5 µF

320

500

IINRUSH

Control of DC

current drive on

VREFBUF_OUT during

startup phase (6)

IDDA

(VREFBUF)

Consumption from

VDDA

Iload = 0 µA

µA

Iload = 500 µA

Iload = 4 mA

1. Specified by design and not tested in production, unless otherwise specified.

2. In degraded mode, the voltage reference buffer cannot accurately maintain the output voltage (VDDA - drop voltage).

3. Evaluated by characterization. Not tested in production.

4. The capacitive load must include a 100 nF capacitor to cut off the high-frequency noise.

5. The load regulation value only takes into account the die and package resistance. The parasitic resistance on PCB degrades

this value.

6. To correctly control the VREFBUF inrush current during startup phase and scaling change, the VDDA voltage must be in the

range of [1.8 V-3.6 V], [2.1 V-3.6 V], [2.4 V-3.6 V], and [2.8 V-3.6 V] for, respectively, VRS = 000, 001, 010, and 011.

Table 88. VREFBUF characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

MSv69705V1

STM32WBA62CGF6 Datasheet(PDF) 154 Page - STMicroelectronics

STM32WBA62CGF6 Datasheet(HTML) 154 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL