7540 datasheet(14/366 Pages) RENESAS

14 / 366 page

7540 Group

List of figures

Fig. 3.2.16 VCC-VIHL characteristics (I/O port (CMOS): Mask ROM version) ........................ 3-37

Fig. 3.2.17 VCC-VIHL characteristics (I/O port (TTL): Mask ROM version) ............................ 3-37

Fig. 3.2.18 VCC-VIHL characteristics (RESET pin: Mask ROM version) ................................. 3-38

Fig. 3.2.19 VCC-VIHL characteristics (XIN pin: Mask ROM version) ......................................... 3-38

Fig. 3.2.20 VCC-VIL characteristics (CNVSS pin: Mask ROM version) ..................................... 3-38

Fig. 3.2.21 VCC-HYS characteristics (RESET pin: Mask ROM version) ................................ 3-39

Fig. 3.2.22 VCC-HYS characteristics (SIO pin: Mask ROM version) ...................................... 3-39

Fig. 3.2.23 VCC-HYS characteristics (INT pin: Mask ROM version) ...................................... 3-39

Fig. 3.2.24 VOH-IOH characteristics of P-channel (VCC = 3.0 V, normal port: Mask ROM version) .. 3-40

Fig. 3.2.25 VOH-IOH characteristics of P-channel (VCC = 5.0 V, normal port: Mask ROM version) .. 3-40

Fig. 3.2.26 VOL-IOL characteristics of N-channel (VCC = 3.0 V, normal port: Mask ROM version) ... 3-41

Fig. 3.2.27 VOL-IOL characteristics of N-channel (VCC = 5.0 V, normal port: Mask ROM version) ... 3-41

Fig. 3.2.28 VOL-IOL characteristics of N-channel (VCC = 3.0 V, LED drive port: Mask ROM version)

................................................................................................................................................. 3-42

Fig. 3.2.29 VOL-IOL characteristics of N-channel (VCC = 5.0 V, LED drive port: Mask ROM version)

................................................................................................................................................. 3-42

Fig. 3.2.30 VCC-IIL characteristics (Port “L” input current when connecting pull-up transistor:

Mask ROM version) .............................................................................................................. 3-43

Fig. 3.2.31 VIN-II(AD) characteristics (A/D port input current during A/D conversion, f(XIN) = 8

MHz in high-speed mode: Mask ROM version) ................................................................ 3-44

Fig. 3.2.32 VIN-II(AD) characteristics (A/D port input current during A/D conversion, f(XIN) = 6

MHz in double-speed mode: Mask ROM version) ............................................................ 3-44

Fig. 3.2.33 VIN-II(AD) characteristics (A/D port input current during A/D conversion, f(XIN) = 4

MHz in double-speed mode: Mask ROM version) ............................................................ 3-44

Fig. 3.2.34 VCC-ROSC characteristics (on-chip oscillator frequency: Mask ROM version) ... 3-45

Fig. 3.2.35 Ta-ROSC characteristics (on-chip oscillator frequency: Mask ROM version) ..... 3-45

Fig. 3.2.36 R-f(XIN) characteristics (RC oscillation frequency: Mask ROM version) ........... 3-46

Fig. 3.2.37 C-f(XIN) characteristics (RC oscillation frequency: Mask ROM version) ........... 3-46

Fig. 3.2.38 VCC-f(XIN) characteristics (RC oscillation frequency: Mask ROM version) ........ 3-47

Fig. 3.2.39 Ta-f(XIN) characteristics (RC oscillation frequency: Mask ROM version) ......... 3-47

Fig. 3.2.40 Definition of A/D conversion aCCuracy ................................................................... 3-48

Fig. 3.2.41 A/D conversion accuracy typical characteristic example-1 (Mask ROM version) .. 3-49

Fig. 3.2.42 A/D conversion accuracy typical characteristic example-2 (Mask ROM version) .. 3-50

Fig. 3.2.43 A/D conversion aCCuracy typical characteristic example-3 (Mask ROM version) .. 3-51

Fig. 3.2.44 VCC-ICC characteristics (in double-speed mode: One Time PROM version) ..... 3-52

Fig. 3.2.45 VCC-ICC characteristics (in high-speed mode: One Time PROM version) ......... 3-52

Fig. 3.2.46 VCC-ICC characteristics (in middle-speed mode: One Time PROM version) ..... 3-52

Fig. 3.2.47 VCC-ICC characteristics (at WIT instruction execution: One Time PROM version) .. 3-53

Fig. 3.2.48 VCC-ICC characteristics (at STP instruction execution: One Time PROM version) .. 3-53

Fig. 3.2.49 VCC-ICC characteristics (addition when operating A/D conversion, f(XIN) = 8 MHz in

high-speed mode: One Time PROM version) ................................................................... 3-54

Fig. 3.2.50 VCC-ICC characteristics (addition when operating A/D conversion, f(XIN) = 6 MHz in

double-speed mode: One Time PROM version) ............................................................... 3-54

Fig. 3.2.51 VCC-ICC characteristics (When system is operating by on-chip oscillator, Ceramic

oscillation stop: One Time PROM version) ....................................................................... 3-55

Fig. 3.2.52 VCC-ICC characteristics (When system is operating by on-chip oscillator, at WIT

instruction execution, Ceramic oscillation stop: One Time PROM version) ................. 3-55

Fig. 3.2.53 f(XIN)-ICC characteristics (in double-speed mode: One Time PROM version) .. 3-56

Fig. 3.2.54 f(XIN)-ICC characteristics (in high-speed mode: One Time PROM version) ...... 3-56

Fig. 3.2.55 f(XIN)-ICC characteristics (in middle-speed mode: One Time PROM version) .. 3-56

Fig. 3.2.56 f(XIN)-ICC characteristics (at WIT instruction execution: One Time PROM version) ... 3-57

Fig. 3.2.57 Ta-ICC characteristics (When system is operating by on-chip oscillator, Ceramic

oscillation stop: One Time PROM version) ....................................................................... 3-57

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