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KM416RD8AS-RBM80 Datasheet(PDF) 40 Page - Samsung semiconductor |
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KM416RD8AS-RBM80 Datasheet(HTML) 40 Page - Samsung semiconductor |
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40 / 64 page ![]() Page 37 KM416RD8AS Direct RDRAM™ Rev. 0.9 July 1999 Target Figure 42: SKIP Register Figure 43: TEST Registers 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 AS MSE MS Read/write register (except AS field). Reset value is zero (SIO Reset). AS - Autoskip. Read-only value determined by autoskip circuit and stored when SETF serial command is received by RDRAM during initialization. In figure 58, AS=1 corresponds to the early Q(a1) packet and AS=0 to the Q(a1) packet one tCYCLE later for the four uncertain cases. MSE - Manual skip enable (0=auto, 1=manual). MS - Manual skip (MS must be 1 when MSE=1).> During initialization, the RDRAMs at the furthest point in the fifth read domain may have selected the AS=0 value, placing them at the closest point in a sixth read domain. Setting the MSE/MS fields to 1/1 overrides the autoskip value and returns them to the furthest point of the fifth read domain. Control Register: SKIP Address: 04b16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 Read/write registers. Reset value of TEST78,79 is zero ( SIO Reset). Do not read or write TEST78,79 after SIO reset. TEST77 must be written with zero after SIO reset. These registers must only be used for testing purposes. Control Register: TEST77 Address: 04d16 Control Register: TEST78 Address: 04e16 Control Register: TEST79 Address: 04f16 Figure 44: TCYCLE Register 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 0 TCYCLE13..TCYCLE0 Read/write register. Reset value is undefined TCYCLE13..0 - Specifies the value of the tCYCLE datasheet parameter in 64ps units. For the tCYCLE,MIN of 2.5ns (2500ps), this field should be written with the value “0002716” (39•64ps). Control Register: TCYCLE Address: 04c16 |
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