KM416RD8AS-RBM80 datasheet(58/64 Pages) SAMSUNG

Part #	KM416RD8AS-RBM80

Description	128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package

PDF	64 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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58 / 64 page

Page 55

KM416RD8AS

Direct RDRAM™

Rev. 0.9 July 1999

Target

Absolute Maximum Ratings

IDD - Supply Current Profile

Table 23: Absolute Maximum Ratings

Symbol

Parameter

Min

Max

Unit

VI,ABS

Voltage applied to any RSL or CMOS pin with respect to Gnd

- 0.3

VDD+0.3

VDD,ABS, VDDA,ABS

Voltage on VDD and VDDA with respect to Gnd

- 0.5

VDD+1.0

TSTORE

Storage temperature

- 50

100

°C

Table 24: Supply Current Profile

IDD value

RDRAM blocks consuming power @ tCYCLE=2.5ns

Min

Max

Unit

IDD,PDN

Self-refresh only for INIT.LSR=0

TBD

300

µA

IDD,PDN,L

Self-refresh only for INIT.LSR= 1

TBD

4.0

IDD,NAP

T/RCLK-Nap

TBD

6.0

IDD,STBY

T/RCLK, ROW-demux

TBD

120

IDD,ATTN

T/RCLK, ROW-demux, COL-demux

TBD

180

IDD,ATTN-W

T/RCLK, ROW-demux,COL-demux,DQ-demux,1

•WR-SenseAmp,4•ACT-Bank

TBD

575

IDD,ATTN-R

T/RCLK, ROW-demux,COL-demux,DQ-mux,1

•RD-SenseAmp,4•ACT-Bank b

TBD

490

a. The CMOS interface consumes power in all power states.

b. This does not include the IOL sink current. The RDRAM dissipates IOL • VOL in each output driver when a logic one is driven.

KM416RD8AS-RBM80 Datasheet(PDF) 58 Page - Samsung semiconductor

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