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KM416RD8AS-RBM80 Datasheet(PDF) 35 Page - Samsung semiconductor

Part # KM416RD8AS-RBM80
Description  128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
PDF  64 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8AS-RBM80 Datasheet(HTML) 35 Page - Samsung semiconductor

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Page 32
KM416RD8AS
Direct RDRAM™
Rev. 0.9 July 1999
Target
.
.
Figure 27: INIT Register
Figure 28: CNFGA Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
SDE
VID
5
TSQ
DIS
TEN LSR
NSR
PSR
SRP PSX
Control Register: INIT
Read/write register.
Reset values are undefined except as affected by SIO Reset as noted
below. SETR/CLRR Reset does not affect this register.
SDEVID5..0 - Serial Device Identification. Compared to SDEV5..0
serial address field of serial request packet for register read/write transac-
tions. This determines which RDRAM is selected for the register read or
write operation. SDEVID resets to 3f16.
0
0
PSX - Power Exit Select. PDN and NAP are exited with (=0) or without (=1) a device address on the
DQA5..0 pins.
SRP - SIO Repeater. Controls value on SIO1; SIO1=SIO0 if SRP=1, SIO1=1 if SRP=0. SRP resets
to 1.
NAP Self-Refresh. NSR=1 enables self-refresh in NAP mode. NSR can’t be set while in NAP
mode. NSR resets to 0.
PDN Self-Refresh. PSR=1 enables self-refresh in PDN mode. PSR can’t be set while in PDN mode.
PSR resets to 0.
Low Power Self-Refresh. LSR=1 enables longer self-refresh interval. The self-refresh supply
current is reduced. LSR resets to 0.
Temperature Sensing Enable. TEN=1 enables temperature sensing circuitry, permitting the TSQ bit
to be read to determine if a thermal trip point has been exceeded. TEN resets to 0.
Temperature Sensing Output. TSQ=1 when a temperature trip point has been exceeded, TSQ=0
when it has not. TSQ is available during a current control operation (see Figure 51).
RDRAM Disable. DIS=1 causes RDRAM to ignore NAP/PDN exit sequence, DIS=0 permits
normal operation. This mechanism disables an RDRAM. DIS resets to 0.
Address: 02116
SDEVID4..SDEVID0
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
DBL
1
MVER5..0
= mmmmmm
PVER5..0
= 000001
Control Register: CNFGA
Address: 02316
Read-only register.
REFBIT2..0 - Refresh Bank Bits. Specifies the number of
bank address bits used by REFA and REFP commands.
Permits multi-bank refresh in future RDRAMs.
DBL - Doubled-Bank. DBL=1 means the device uses a
doubled-bank architecture with adjacent-bank dependency.
DBL=0 means no dependency.
MVER5..0 - Manufacturer Version. Specifies the manufac-
turer identification number.
PVER5..0 - Protocol Version. Specifies the Direct Protocol
version used by this device:
0 - Compliant with version 0.62 and ECO1-ECO18.
1 - Compliant with version 0.7 and ECO1-ECO38.
2 to 63 - Reserved.
Note: In RDRAMs with protocol version 1 PVER[5:0] = 000001, the
range of the PDNX field (PDNX[2:0] in the PDNX register) may not
be large enough to specify the location of the restricted interval in
Figure 47. In this case, the effective tS4 parameter must increase and
no row or column packets may overlap the restricted interval. See
Figure 47 and Table 19.
REFBIT2..0
= 100



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