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KM416RD8AS-RBM80 Datasheet(PDF) 26 Page - Samsung semiconductor

Part # KM416RD8AS-RBM80
Description  128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
PDF  64 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8AS-RBM80 Datasheet(HTML) 26 Page - Samsung semiconductor

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Page 23
KM416RD8AS
Direct RDRAM™
Rev. 0.9 July 1999
Target
Write/Retire Examples - continued
The RD will prevent a retire of the first WR from automati-
cally happening. But the first dualoct D(a1) in the write
buffer will be overwritten by the second WR dualoct D(b1)
if the RD command is issued in the third COLC packet.
Therefore, it is required in this situation that the controller
issue a NOCOP command in the third COLC packet,
delaying the RD command by a time of tPACKET. This situa-
tion is explicitly shown in Table 12 for the cases in which
tCCDELAY is equal to tRTR.
Figure 19 shows a possible result when a retire is held off for
a long time (an extended version of Figure 18-left). After a
WR command, a series of six RD commands are issued to
the same device (but to any combination of bank and column
addresses). In the meantime, the bank Ba to which the WR
command was originally directed is precharged, and a
different row Rc is activated. When the retire is automati-
cally performed, it is made to this new row, since the write
buffer only contains the bank and column address, not the
row address. The controller can insure that this doesn’t
happen by never precharging a bank with an unretired write
buffer. Note that in a system with more than one RDRAM,
there will never be more than two RDRAMs with unretired
write buffers. This is because a WR command issued to one
device automatically retires the write buffers of all other
devices written a time tRTR before or earlier.
Figure 18: Retire Held Off by Read (left) and Controller Forces WWR Gap (right)
CTM/CFM
DQA7..0
DQB7..0
COL4
..COL0
ROW2
..ROW0
T0
T4
T8
T12
T1
T5
T9
T13
T2
T6
T10
T14
T3
T7
T11
T15 T16
T20
T17
T21
T18
T22
T19
T23
Transaction a: WR
Transaction b: RD
a1= {Da,Ba,Ca1}
b1= {Da,Bb,Cb1}
Transaction a: WR
Transaction b: WR
a1= {Da,Ba,Ca1}
b1= {Da,Bb,Cb1}
D (a1)
WR a1
retire (a1)
MSK (a1)
RD b1
Q (b1)
tCWD
tCAC
CTM/CFM
DQA7..0
DQB7..0
COL4
..COL0
ROW2
..ROW0
T0
T4
T8
T12
T1
T5
T9
T13
T2
T6
T10
T14
T3
T7
T11
T15 T16
T20
T17 T18 T19
D (a1)
WR a1
RD c1
tRTR
retire (a1)
MSK (a1)
tCWD
tCAC
WR b1
D (b1)
Transaction c: RD
c1= {Da,Bc,Cc1}
The controller must insert a NOCOP to retire (a1)
to make room for the data (b1) in the write buffer
The retire operation for a write can be
held off by a read to the same device
tRTR + tPACKET
Figure 19: Retire Held Off by Reads to Same Device, Write Buffer Retired to New Row
CTM/CFM
DQA7..0
DQB7..0
COL4
..COL0
ROW2
..ROW0
T0
T4
T8
T12
T1
T5
T9
T13
T2
T6
T10
T14
T3
T7
T11
T15 T16
T20
T24
T28
T17
T21
T25
T29
T18
T22
T26
T30
T19
T23
T27
T31 T32
T36
T40
T44
T33
T37
T41
T45
T34
T38
T42
T46
T35
T39
T43
T47
MSK (a1)
retire (a1)
RD b1
WR a1
PRER a2
tRCD
ACT c0
tRAS
tRC
tRP
ACT a0
tCWD
tRTR
Transaction a: WR
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba}
RD b2
RD b3
RD b4
RD b5
RD b6
Transaction b: RD
b1 = {Da,Bb,Cb1}
b2 = {Da,Bb,Cb2}
b3= {Da,Bb,Cb3}
b4 = {Da,Bb,Cb4}
b5 = {Da,Bb,Cb5}
b6 = {Da,Bb,Cb6}
Q (b1)
tCAC
Q (b2)
Q (b3)
Q (b4)
Q (b5)
Transaction c: WR
c0 = {Da,Ba,Rc}
D (a1)
The retire operation puts the
write data in the new row
WARNING
This sequence is hazardous
and must be used with caution



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