H5AN8G6NAFR-RDC datasheet(12/45 Pages) HYNIX

12 / 45 page

Rev. 1.2 / Jul.2017

Absolute Maximum Ratings

Absolute Maximum DC Ratings

NOTE :

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any other conditions above those indi-

cated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions

for extended periods may affect reliability

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement

conditions, please refer to JESD51-2 standard.

3. VDD and VDDQ must be within 300 mV of each other at all times;and VREFCA must be not greater than 0.6 x

VDDQ, When VDD and VDDQ are less than 500 mV; VREFCA may be equal to or less than 300 mV

4. VPP must be equal or greater than VDD/VDDQ at all times

5. Overshoot area above 1.5V is specified in DDR4 Device Operation.

DRAM Component Operating Temperature Range

Absolute Maximum DC Ratings

Symbol

Parameter

Rating

Units

NOTE

VDD

Voltage on VDD pin relative to Vss

-0.3 ~ 1.5

1,3

VDDQ

Voltage on VDDQ pin relative to Vss

-0.3 ~ 1.5

1,3

VPP

Voltage on VPP pin relative to Vss

-0.3 ~ 3.0

VIN, VOUT

Voltage on any pin except VREFCA relative to Vss

-0.3 ~ 1.5

1,3,5

TSTG

Storage Temperature

-55 to +100

°C

1,2

Temperature Range

Symbol

Parameter

Rating

Units

Notes

TOPER

Normal Operating Temperature Range

0 to 85

1,2

Extended Temperature Range

85 to 95

oC1,3

Notes:

1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measure-

ment conditions, please refer to the JEDEC document JESD51-2.

2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported.

During operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating condi-

tions.

3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC

case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:

a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It is

also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.

Please refer to the DIMM SPD for option availability

b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use

the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b)

or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b).

H5AN8G6NAFR-RDC Datasheet(PDF) 12 Page - Hynix Semiconductor

H5AN8G6NAFR-RDC Datasheet(HTML) 12 Page - Hynix Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

Datasheet Download

Link URL