H5AN8G6NAFR-RDC datasheet(20/45 Pages) HYNIX

20 / 45 page

Rev. 1.2 / Jul.2017

IDD6R

Self-Refresh Current: Reduced Temperature Range

TCASE: 0 - TBD (~35-45)°C; Low Power Array Self Refresh (LP ASR) : Reduced4; CKE: Low;

External clock: Off; CK_t and CK_c#: LOW; CL: see Table 1; BL: 81; AL: 0; CS_n#, Command,

Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at 1; Bank Activity:

Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers2;

ODT Signal: MID-LEVEL

IPP6R

Self Refresh IPP Current: Reduced Temperature Range

Same condition with IDD6R

IDD6A

Auto Self-Refresh Current

TCASE: 0 - 95°C; Low Power Array Self Refresh (LP ASR) : Auto4; CKE: Low; External clock: Off;

CK_t and CK_c#: LOW; CL: see Table 1; BL: 81; AL: 0; CS_n#, Command, Address, Bank Group

Address, Bank Address, Data IO: High; DM_n:stable at 1; Bank Activity: Auto Self-Refresh

operation; Output Buffer and RTT: Enabled in Mode Registers2; ODT Signal: MID-LEVEL

IPP6A

Auto Self-Refresh IPP Current

Same condition with IDD6A

IDD7

Operating Bank Interleave Read Current

CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see Table 1; BL: 81; AL:

CL-1; CS_n: High between ACT and RDA; Command, Address, Bank Group Address, Bank Address

Inputs: partially toggling according to Table 10; Data IO: read data bursts with different data between

one burst and the next one according to Table 10; DM_n: stable at 1; Bank Activity: two times

interleaved cycling through banks (0, 1, ...7) with different addressing, see Table 10; Output Buffer and

RTT: Enabled in Mode Registers2; ODT Signal: stable at 0; Pattern Details: see Table 10

IPP7

Operating Bank Interleave Read IPP Current

Same condition with IDD7

IDD8

Maximum Power Down Current

TBD

IPP8

Maximum Power Down IPP Current

Same condition with IDD8

H5AN8G6NAFR-RDC Datasheet(PDF) 20 Page - Hynix Semiconductor