FS32R274VCK2MMM datasheet(20/78 Pages) NXP

20 / 78 page

Table 11. Radar AFE External Components (continued)

Component

Value

Tolerance

Placement

Priority of

larger cap. 1

Placement

Priority of

smaller cap1

Special notes

C18

10 μF

—

X7R type

C19

220 nF

—

Sigma Delta ADC input capacitor. See Figure

C20

220 nF

—

Sigma Delta ADC input capacitor. See Figure

40.2 kΩ

±0.1%

—

tempco = 25ppm/C

300 Ω

—

DAC Rl See Table 27

300 Ω

—

DAC Rl See Table 27

Crystal

40MHz

—

Connected between XOSC_EXTAL/

XOSC_XTAL, ESR ≤ 30Ω

1. All Radar AFE external bypass capacitors should be placed as close as possible to the associated package pin. As shown

in Radar AFE External Components Configuration figure, most pins have two values of bypass capacitor. Greater than 0.1

μF is referred to as the larger cap. 0.1 μF is referred to as the smaller cap.

4.5 Electromagnetic Compatibility (EMC) specifications

EMC measurements to IC-level IEC standards are available from NXP on request.

4.6 Electrostatic discharge (ESD) characteristics

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n + 1) supply pin). This

test conforms to the AEC-Q100-002/-003/-011 standard.

NOTE

A device will be defined as a failure if after exposure to ESD

pulses the device no longer meets the device specification

requirements. Complete DC parametric and functional testing

shall be performed per applicable device specification at room

temperature followed by hot temperature, unless specified

otherwise in the device specification.

Table 12. ESD ratings

No.

Symbol

Parameter

Conditions1

Class

Max value2

Unit

VESD(HBM)

Electrostatic discharge

(Human Body Model)

TA = 25 °C

H1C

2000

Table continues on the next page...

General

S32R274/S32R264 Series Data Sheet, Rev. 6, 06/2021

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