PIC18F6X2X datasheet(86/386 Pages) MICROCHIP

86 / 386 page

PIC18F6X2X/8X2X

DS39612A-page 84

Advance Information

 2003 Microchip Technology Inc.

7.5

Write Verify

Depending on the application, good programming

practice may dictate that the value written to the mem-

ory should be verified against the original value. This

should be used in applications where excessive writes

can stress bits near the specification limit.

7.6

Protection Against Spurious Write

There are conditions when the device may not want to

write to the data EEPROM memory. To protect against

spurious EEPROM writes, various mechanisms have

been built-in. On power-up, the WREN bit is cleared.

Also, the Power-up Timer (72 ms duration) prevents

EEPROM write.

The write initiate sequence and the WREN bit together

help prevent an accidental write during brown-out,

power glitch, or software malfunction.

7.7

Operation During Code Protect

Data EEPROM memory has its own code protect

mechanism. External read and write operations are

disabled if either of these mechanisms are enabled.

The microcontroller itself can both read and write to the

internal data EEPROM regardless of the state of the

code protect configuration bit. Refer to Section 24.0,

“Special

Features

the

CPU”

for

additional

information.

7.8

Using the Data EEPROM

The data EEPROM is a high endurance, byte address-

able array that has been optimized for the storage of

frequently changing information (e.g., program vari-

ables or other data that are updated often). Frequently

changing values will typically be updated more often

than specification D124. If this is not the case, an array

refresh must be performed. For this reason, variables

that change infrequently (such as constants, IDs, cali-

bration, etc.) should be stored in FLASH program

memory.

A simple data EEPROM refresh routine is shown in

Example 7-3.

EXAMPLE 7-3:

DATA EEPROM REFRESH ROUTINE

Note:

If data EEPROM is only used to store con-

stants and/or data that changes rarely, an

array refresh is likely not required. See

specification D124.

CLRF

EEADR

; Start at address 0

CLRF

EEADRH

;

BCF

EECON1,CFGS

; Set for memory

BCF

EECON1,EEPGD

; Set for Data EEPROM

BCF

INTCON,GIE

; Disable interrupts

BSF

EECON1,WREN

; Enable writes

Loop

; Loop to refresh array

BSF

EECON1,RD

; Read current address

MOVLW

55h

;

MOVWF

EECON2

; Write 55h

MOVLW

AAh

;

MOVWF

EECON2

; Write AAh

BSF

EECON1,WR

; Set WR bit to begin write

BTFSC

EECON1,WR

; Wait for write to complete

BRA

$-2

INCFSZ

EEADR,F

; Increment address

BRA

Loop

; Not zero, do it again

INCFSZ

EEADRH, F

; Increment the high address

BRA

Loop

; Not zero, do it again

BCF

EECON1,WREN

; Disable writes

BSF

INTCON,GIE

; Enable interrupts

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