DRV8876PWPR datasheet(5/51 Pages) TI2

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DRV8876

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SLVSDS7B – AUGUST 2019 – REVISED NOVEMBER 2019

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For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

DRV8876

UNIT

RGT (VQFN)

PWP (HTSSOP)

16 PINS

RθJA

Junction-to-ambient thermal resistance

45.9

44.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

48.8

38.3

°C/W

RθJB

Junction-to-board thermal resistance

19.9

20.5

°C/W

ΨJT

Junction-to-top characterization parameter

1.1

1.0

°C/W

ΨJB

Junction-to-board characterization parameter

19.9

20.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

7.1

5.0

°C/W

6.5 Electrical Characteristics

4.5 V

≤ VVM ≤ 37 V, –40°C ≤ TJ ≤ 150°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLIES (VCP, VM)

IVMQ

VM sleep mode current

VVM = 24 V, nSLEEP = 0 V, TJ = 25°C

0.75

µA

nSLEEP = 0 V

µA

IVM

VM active mode current

VVM = 24 V, nSLEEP = 5 V,

EN/IN1 = PH/IN2 = 0 V

tWAKE

Turnon time

VVM > VUVLO, nSLEEP = 5 V to active

tSLEEP

Turnoff time

nSLEEP = 0 V to sleep mode

VVCP

Charge pump regulator voltage

VCP with respect to VM, VVM = 24 V

fVCP

Charge pump switching frequency

400

kHz

LOGIC-LEVEL INPUTS (EN/IN1, PH/IN2, nSLEEP)

VIL

Input logic low voltage

VVM < 5 V

0.7

VVM ≥ 5 V

0.8

VIH

Input logic high voltage

1.5

5.5

VHYS

Input hysteresis

200

nSLEEP

IIL

Input logic low current

VI = 0 V

–5

µA

IIH

Input logic high current

VI = 5 V

µA

RPD

Input pulldown resistance

To GND

100

kΩ

TRI-LEVEL INPUTS (PMODE)

VTIL

Tri-level input logic low voltage

0.65

VTIZ

Tri-level input Hi-Z voltage

0.9

1.1

1.2

VTIH

Tri-level input logic high voltage

1.5

5.5

ITIL

Tri-level input logic low current

VI = 0 V

–50

–32

µA

ITIZ

Tri-level input Hi-Z current

VI = 1.1 V

–5

µA

ITIH

Tri-level input logic high current

VI = 5 V

113

150

µA

RTPD

Tri-level pulldown resistance

To GND

kΩ

RTPU

Tri-level pullup resistance

To internal 5 V

156

kΩ

QUAD-LEVEL INPUTS (IMODE)

VQI2

Quad-level input level 1

Voltage to set quad-level 1

0.45

RQI2

Quad-level input level 2

Resistance to GND to set quad-level 2

18.6

21.4

kΩ

RQI3

Quad-level input level 3

Resistance to GND to set quad-level 3

57.6

66.4

kΩ

VQI4

Quad-level input level 4

Voltage to set quad-level 4

2.5

5.5

RQPD

Quad-level pulldown resistance

To GND

136

kΩ

RQPU

Quad-level pullup resistance

To internal 5 V

kΩ

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