MB9B360R datasheet(150/166 Pages) CYPRESS

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Document Number: 002-04872 Rev.*A

Page 150 of 166

MB9B360R Series

12.9 MainFlash Memory Write/Erase Characteristics

(VCC = 2.7V to 5.5V)

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

Large Sector

0.7

3.7

Includes write time prior to internal erase

Small Sector

0.3

1.1

Half word (16-bit)

write time

Write cycles

< 100 times

100

μs

Not including system-level overhead time

Write cycles >

100 times

200

Chip erase time

13.6

Includes write time prior to internal erase

Write cycles and data hold time

Erase/Write cycles (cycle)

Data hold time (year)

1,000

20 *

10,000

10 *

100,000

5 *

* : This value comes from the technology qualification (using Arrhenius equation to translate high temperature acceleration test

result into average temperature value at + 85°C) .

12.10WorkFlash Memory Write/Erase Characteristics

(VCC = 2.7V to 5.5V)

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

0.3

1.5

Includes write time prior to internal erase

Half word (16-bit)

write time

200

μs

Not including system-level overhead time

Chip erase time

1.2

Includes write time prior to internal erase

Write cycles and data hold time

Erase/Write cycles (cycle)

Data hold time (year)

1,000

20 *

10,000

10 *

100,000

5 *

* : This value comes from the technology qualification (using Arrhenius equation to translate high temperature acceleration test

result into average temperature value at + 85°C) .

MB9B360R Datasheet(PDF) 150 Page - Cypress Semiconductor

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