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MB9B360R Datasheet(PDF) 153 Page - Cypress Semiconductor |
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MB9B360R Datasheet(HTML) 153 Page - Cypress Semiconductor |
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153 / 166 page ![]() Document Number: 002-04872 Rev.*A Page 153 of 166 MB9B360R Series 12.11.2 Recovery cause: Reset The time from reset release to the program operation start is shown. Recovery count time (VCC = 2.7V to 5.5V, VSS = 0V) Parameter Symbol Value Unit Remarks Typ Max* Sleep mode Trcnt 111 267 μs High-speed CR Timer mode Main Timer mode PLL Timer mode 111 267 μs Low-speed CR timer mode 258 569 μs Sub timer mode 258 569 μs RTC mode stop mode 258 569 μs Deep standby RTC mode with RAM retention Deep standby stop mode with RAM retention 308 669 μs without RAM retention μs with RAM retention * : The maximum value depends on the built-in CR accuracy. Example of standby recovery operation (when in INITX recovery) INITX Trcnt Internal RST CPU Operation Start RST Active Release |
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