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XCVU29P Datasheet(PDF) 3 Page - Advanced Micro Devices |
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XCVU29P Datasheet(HTML) 3 Page - Advanced Micro Devices |
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3 / 68 page ![]() Table 1: Absolute Maximum Ratings (cont'd) Symbol Description1 Min Max Units Tj Maximum junction temperature for XCVU31P, XCVU33P, XCVU35P, XCVU37P – 120 °C Maximum junction temperature for all other devices – 125 °C Notes: 1. Stresses beyond those listed under Absolute Maximum Ratings might cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time might affect device reliability. 2. VCCINT_IO must be connected to VCCBRAM. 3. VCCAUX_IO must be connected to VCCAUX. 4. The lower absolute voltage specification always applies. 5. For I/O operation, see the UltraScale Architecture SelectIO Resources User Guide (UG571). 6. When operating outside of the recommended operating conditions, refer to Table 4 for maximum overshoot and undershoot specifications. 7. For more information on supported GTY transceiver terminations see the UltraScale Architecture GTY Transceivers User Guide (UG578) or Virtex UltraScale+ FPGAs GTM Transceivers User Guide (UG581). 8. AC coupled operation is not supported for RX termination = floating. 9. For GTY transceivers, DC coupled operation is not supported for RX termination = GND. 10. DC coupled operation is not supported for RX termination = programmable. 11. For soldering guidelines and thermal considerations, see the UltraScale and UltraScale+ FPGAs Packaging and Pinouts Product Specification (UG575). 12. For devices with high-bandwidth memory (HBM), the storage temperature is the case surface temperature on the center/top side of the device. For the measurement conditions, refer to the JESD51-2 standard. Recommended Operating Conditions Table 2: Recommended Operating Conditions Symbol Description1, 2 Min Typ Max Units FPGA Logic VCCINT Internal supply voltage 0.825 0.850 0.876 V For -2LE (VCCINT = 0.72V) devices: internal supply voltage 0.698 0.720 0.742 V For -3E devices: internal supply voltage 0.873 0.900 0.927 V VCCINT_IO3 Internal supply voltage for the I/O banks 0.825 0.850 0.876 V For -2LE (VCCINT = 0.72V) devices: internal supply voltage for the I/O banks 0.825 0.850 0.876 V For -3E devices: internal supply voltage for the I/O banks 0.873 0.900 0.927 V VCCBRAM Block RAM supply voltage 0.825 0.850 0.876 V For -3E devices: block RAM supply voltage 0.873 0.900 0.927 V VCCAUX Auxiliary supply voltage 1.746 1.800 1.854 V VCCO4, 5 Supply voltage for I/O banks 0.950 – 1.900 V VCCAUX_IO6 Auxiliary I/O supply voltage 1.746 1.800 1.854 V VIN7 I/O input voltage –0.200 – VCCO + 0.200 V IIN8 Maximum current through any pin in a powered or unpowered bank when forward biasing the clamp diode – – 10 mA VBATT9 Battery voltage 1.000 – 1.890 V High Bandwidth Memory VCC_HBM Supply voltage for the high-bandwidth memory (HBM) 1.164 1.200 1.236 V Virtex UltraScale+ FPGA Data Sheet: DC and AC Switching Characteristics DS923 (v1.10) April 26, 2019 www.xilinx.com Product Specification 3 Send Feedback |
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