XCVU29P datasheet(5/68 Pages) AMD

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Table 2: Recommended Operating Conditions (cont'd)

Symbol

Description1, 2

Min

Typ

Max

Units

Temperature

Tj11

Junction temperature operating range for XCVU31P, XCVU33P,

XCVU35P, and XCVU37P extended (E) temperature devices12, 13,

–

100

°C

Junction temperature operating range for all other extended (E)

temperature devices12

–

100

°C

Junction temperature operating range for industrial (I)

temperature devices

–40

–

100

°C

Junction temperature operating range for eFUSE

programming15

–40

–

125

°C

Notes:

All voltages are relative to GND.

For the design of the power distribution system consult the UltraScale Architecture PCB Design User Guide (UG583).

VCCINT_IO must be connected to VCCBRAM.

For VCCO_0, the minimum recommended operating voltage for power on and during configuration is 1.425V. After configuration, data is

retained even if VCCO drops to 0V.

Includes VCCO of 1.0V, 1.2V, 1.35V, 1.5V, and1.8V.

VCCAUX_IO must be connected to VCCAUX.

The lower absolute voltage specification always applies.

A total of 200 mA per bank should not be exceeded.

If battery is not used, connect VBATT to either GND or VCCAUX.

10. Each voltage listed requires filtering as described in the UltraScale Architecture GTY Transceivers User Guide (UG578) or the Virtex UltraScale

+ FPGAs GTM Transceivers User Guide (UG581).

11. Xilinx recommends measuring the Tj of a device using the system monitor as described in the UltraScale Architecture System Monitor User

Guide (UG580). The system monitor temperature measurement errors (that are described in Table 74) must be accounted for in your

design. For example, when using the system monitor with an external reference of 1.25V, and when the system monitor reports 97°C,

there is a measurement error ±3°C. A reading of 97°C is considered the maximum adjusted Tj (100°C – 3°C = 97°C).

12. Devices labeled with the speed/temperature grade of -2LE can operate for a limited time at a junction temperature between 100°C and

110°C. Timing parameters adhere to the same speed file at 110°C as they do below 110°C, regardless of operating voltage (nominal

voltage of 0.85V or a low-voltage of 0.72V). Operation up to Tj = 110°C is limited to 1% of the device lifetime and can occur sequentially or

at regular intervals as long as the total time does not exceed 1% of the device lifetime.

13. The recommended maximum operating temperature for high-bandwidth memory is 95°C.

14. Devices with HBM and labeled with the speed/temperature grade of -2LE can operate for a limited time at a junction temperature

between 95°C and 105°C. HBM operation up to Tj = 105°C is limited to 4.1% of the device lifetime and can occur sequentially or at regular

intervals as long as the total time does not exceed 4.1% of the device lifetime, and for no longer than 96 hours at a time. While operating

the HBM above 95°C, the refresh rate must be at least 4x the refresh rate at 95°C.

15. Do not program eFUSE during device configuration (e.g., during configuration, during configuration readback, or when readback CRC is

active).

DC Characteristics Over Recommended Operating Conditions

Table 3: DC Characteristics Over Recommended Operating Conditions

Symbol

Description

Min

Typ1

Max

Units

VDRINT

Data retention VCCINT voltage (below which configuration data

might be lost)

0.68

–

VDRAUX

Data retention VCCAUX voltage (below which configuration data

might be lost)

1.5

–

IREF

VREF leakage current per pin

–

µA

Input or output leakage current per pin (sample-tested)2

–

µA

CIN3

Die input capacitance at the pad

–

3.1

Virtex UltraScale+ FPGA Data Sheet: DC and AC Switching Characteristics

DS923 (v1.10) April 26, 2019

www.xilinx.com

Product Specification

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