AN4043 datasheet(12/60 Pages) STMICROELECTRONICS

12 / 60 page

Inverter design concept and SLLIMM-nano solution

AN4043

12/60

Doc ID 022726 Rev 2

The SLLIMM-nano specifications are described below using the STGIPN3H60 datasheet as

an example. Please refer to the respective product datasheets for a detailed description of

all possible types.

Equation 1

●

VCES: collector emitter voltage

The power stage of the SLLIMM-nano is based on IGBTs (and freewheeling diodes) having

600 V VCES rating. Generally, considering the intelligent power module internal stray

inductances during the commutations, which can generate some surge voltages, the

maximum surge voltage between P-N (VPN(surge)) allowed is lower than VCES, as shown in

Figure 7. At the same time, considering also the surge voltage generated by the stray

inductance between the device and the DC-link capacitor, the maximum supply voltage (in

steady-state) applied between P-N (VPN) must be even lower than VPN(surge). Thanks to the

small package size and the lower working current, this phenomenon is less marked in the

SLLIMM-nano than in a big intelligent power module.

Table 2.

Inverter part

Symbol

Parameter

Value

Unit

VCES

Collector emitter voltage (VIN

(1) = 0)

Applied between HINU, HINV, HINW; LINU, LINV, LINW and GND.

600

±IC

(2)

Calculated according to the iterative

Equation 1.

Each IGBT continuous collector current at TC = 25 °C

±IC

(3)

Pulse width limited by max. junction temperature.

Each IGBT pulsed collector current

PTOT

Each IGBT total dissipation at TC = 25 °C

))

(

)

(

max,

)(max)

sat

(

)

(

max

⋅

−

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