W7500P datasheet(33/38 Pages) WIZNET

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5.7 I/O PAD Characteristics

DC Specification

Table 16 shows the DC specification of W7500x I/O PAD.

Table 16 DC specification of PAD

Symbol

Parameter

Conditions

Min

Max

Unit

VIH

I/O Input high voltage

2.145

VIL

I/O Input low voltage

1.155

VHYS

Schmitt trigger

hysteresis

0.33

IIH

I/O Input high current

IIL

I/O Input low current

-1

VOH

I/O Output high voltage

High driving strength Iload =

6mA

Low driving strength Iload =

3mA

2.5

VOL

I/O Output low voltage

High driving strength Iload =

6mA

Low driving strength Iload =

3mA

0.5

Rpup

Rpdn

Pull-up

/Pull-down resistor

100

KOhm

Flash memory

Table 17 shows the flash memory reliability characteristics of W7500x

Table 17 Flash memory Reliability Characteristics

Symbol

Parameter

Min

Unit

NEND

Sector Endurance

10,000

Cycles

TDR

Data Retention

Years

5.8 Electrical Sensitivity Characteristics

Electostatic discharge (ESD)

Table 18 shows the ESD information of W7500x

Table 18 Electrostatic discharge (ESD)

Symbol

Parameter

Test Method

Min

Max

Unit

VESD(HBM)

Electostatic discharge (Human body model)

AEC-Q100-002

±2000

VESD(CDM)

Electostatic discharge (Charge device model)

AEC-Q100-011

±500

Static latch-up

Table 19 shows the Static latch-up information of W7500x

Table 19 Static latch-up

Symbol

Parameter

Test Method

Min

Max Unit

ILAT

Latch up current at 125 ℃ ambient

temperature

AEC-Q100-004

±100

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