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28HS01GTAM03 Datasheet(PDF) 109 Page - Infineon Technologies AG |
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28HS01GTAM03 Datasheet(HTML) 109 Page - Infineon Technologies AG |
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109 / 138 page ![]() Datasheet 109 of 138 002-18216 Rev. *W 2022-01-18 256Mb/512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V Timing characteristics 8 Timing characteristics Table 85 Timing characteristics[45] Symbol Parameter Min Typ Max Unit Reference figure Octal SDR/DDR fCK CK Clock Frequency for Octal mode transactions using DS (HS-T) 0 200 MHz CK Clock Frequency for Octal mode transactions using DS (HL-T) 166 pCK CK Clock Period 1/fCK ∞ ns Figure 72 tCH Clock High Time 45% pCK 55% pCK Figure 75 tCL Clock Low Time tCS CS# High Time (Read transactions) 10 Figure 78 / Figure 79 CS# High Time Between Transactions (Interface CRC Read Register and aborted transaction) 50 CS# High Time (Program / Erase transactions) 50 tCSS CS# Active Setup Time (relative to CK) 4 tCSH0 CS# Active Hold Time (relative to CK in Mode 0) 4 tCSH3 CS# Active Hold Time (relative to CK in Mode 3) 6.5 tSU HS-T Data Setup Time (all VCC) 0.5 HL-T Data Setup Time (all VCC)0.6 tHD HL-T Data Hold Time (all VCC)0.6 HS-T Data Hold Time (all VCC)0.5 tV[43] Clock Low to Output Valid (15pF Loading) (HS-T) 2 5.45 Figure 78 / Figure 80 Clock Low to Output Valid (15pF Loading) (HL-T) 7.25 tCKDS DS Valid (HS-T) 5.45 DS Valid (HL-T) 7.25 tDSS[51] DS transition to Data Valid 0.4 0.4 tDSH[51] DS transition to Data Invalid 0.4 0.4 tHO Output Hold Time 0.4 Figure 78 tDIS[44] CS# Inactive to Output Disable Time (HS-T) (SDR / DDR) 6.50 / 6.0 Figure 78 / Figure 80 CS# Inactive to Output Disable Time (HL-T) 7.50 tDSZ CS# Inactive to DS Disable Time (HS-T) (SDR / DDR) 6.50 / 6.0 CS# Inactive to DS Disable Time (HL-T) 7.50 tIO_SKEW[5 1] Data Skew (First Data Bit to Last Data Bit) 0.5 tPS Program/Erase Transaction CS# Invalid to Program Suspend / Erase Suspend Transaction CS# Invalid (Interface CRC) 15 µs Figure 41 tCSDS CS# Low to DS Low 10 ns Figure 30 / Figure 31 SPI SDR fCK CK Clock Frequency 0 166 MHz pCK CK Clock Period 1/ fCK ∞ ns Figure 72 Notes 43. Full VCC range and CL = 15pF. 44. Output HI-Z is defined as the point where data is no longer driven. 45. Applicable across all operating temperature options. 46. If Reset# is asserted during the end of tPU, the device will remain in the reset state and tRH will determine when CS# may go Low. 47. Sum of tRP and tRH must be equal to or greater than tRPH. 48. Typical program and erase times assume the following conditions: 25°C, VCC = 1.8V and 3.0V; checkerboard data pattern. 49. The programming time for any OTP programming transaction is the same as tPP. This includes PRSSR_4_1. 50. The programming time for the PRPPB_4_0 transaction is the same as tPP. The erase time for ERPPB_0_0 transaction is the same as tSE. 51. Values are guaranteed by characterization and not 100% tested in production. 52. Guaranteed by design. 53. The Joint Electron Device Engineering Council (JEDEC) standard JESD22-A117 defines the procedural requirements for performing valid endurance and retention tests based on a qualification specification. This methodology is intended to determine the ability of a flash device to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life (data retention). Endurance and retention qualifica- tion specifications are specified in JESD47 or may be developed using knowledge-based methods as in JESD94. |
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