XM33C321ASPZR datasheet(45/122 Pages) TI2

45 / 122 page

VDD=3.3V, VBAT=3.3V. All inputs in VDD domain tied to 0V or VDD, All inputs in VBAT Island tied to 0V or VBAT. Outputs do

not source or sink any current. All peripherals not noted are disabled.

PARAMETER

ULPCLK

-40°C

25°C

85°C

105°C

125°C

UNIT

TYP MAX

IDD

(Standby)

TIMG4_0 enabled

32kHz

3.8

133

123

191

155

320

µA

GPIOA enabled

3.8

133

123

191

155

320

7.5.3 SHUTDOWN Mode

All inputs in VDD domain tied to 0V or VDD. Core regulator is powered down.

PARAMETER

VDD

-40°C

25°C

85°C

105°C

125°C

UNIT

TYP MAX

TYP

MAX

IDD

(Shutdown)

Supply current in SHUTDOWN mode

3.3V

150

100

250 2269 4600 3523 7200 5830 15000

7.5.4 VBAT current consumption

VDD=3.3V, VBAT=3.3V. All inputs in VDD Island tied to 0V or VDD, All inputs in VBAT Island tied to 0V or VBAT. Outputs do

not source or sink any current. Core regulator is powered down.

PARAMETER

VDD

-40°C

25°C

85°C

105°C

125°C

UNIT

TYP MAX TYP MAX TYP MAX TYP MAX TYP MAX

IDD (VBAT) LF-XT and RTC is running

32kHz

1.4

2.2

1.6

2.2

1.9

2.5

2.1

2.7

8.5

µA

7.6 Flash Memory Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Supply

VDDPGM/ERASE

Program and erase supply voltage

1.71

3.6

IDDERASE

Supply current from VDD during erase

operation

Supply current delta

IDDPGM

Supply current from VDD during

program operation

Supply current delta

Endurance

NWEC(CODEFLASH)

Erase/program cycle endurance (code

flash)

k cycles

NWEC(DATAFLASH)

(1)

Erase/program cycle endurance (data

flash)

100

k cycles

NE(MAX)

Total erase operations before failure (2)

802

k erase operations

NW(MAX)

Write operations per word line before

sector erase(3)

write operations

Retention

tRET_85

Flash memory data retention

-40°C <= Tj <= 85°C

years

tRET_105

Flash memory data retention

-40°C <= Tj <= 105°C

11.4

years

tRET_130

Flash memory data retention

-40°C <= Tj <= 130°C

2.4

years

Program and Erase Timing

tPROG (WORD, 128)

Program time for flash word (4) (6)

µs

tPROG (SEC, 128)

Program time for 2kB sector (5) (6)

9.7

tERASE (SEC)

Sector erase time

≤2k erase/program cycles,

Tj ≥ 25°C

tERASE (SEC)

Sector erase time

≤10k erase/program cycles,

Tj ≥ 25°C

150

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MSPM33C321A, MSPM33C3219

SLASFB6A – DECEMBER 2025 – REVISED SEPTEMBER 2026

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XM33C321ASPZR Datasheet(PDF) 45 Page - Texas Instruments

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