TMS320F28375DPZP datasheet(67/222 Pages) TI1

67 / 222 page

TMS320F28379D, TMS320F28378D, TMS320F28377D

TMS320F28376D, TMS320F28375D, TMS320F28374D

www.ti.com

SPRS880K – DECEMBER 2013 – REVISED NOVEMBER 2018

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TMS320F28374D

Specifications

5.9.3.4

Crystal Oscillator

When using a quartz crystal, it may be necessary to include a damping resistor (RD) in the crystal circuit to

prevent over-driving the crystal (drive level can be found in the crystal data sheet). In higher-frequency

applications (10 MHz or greater), RD is generally not required. If a damping resistor is required, RD should

be as small as possible because the size of the resistance affects start-up time (smaller RD = faster start-

up time). TI recommends that the crystal manufacturer characterize the crystal with the application board.

Table 5-15 shows the crystal oscillator parameters. Table 5-16 shows the crystal equivalent series

resistance (ESR) requirements. Table 5-17 shows the crystal oscillator electrical characteristics.

Table 5-15. Crystal Oscillator Parameters

MIN

MAX

UNIT

CL1, CL2

Load capacitance

Crystal shunt capacitance

(1)

Crystal shunt capacitance (C0) should be less than or equal to 7 pF.

(2)

ESR = Negative Resistance/3

Table 5-16. Crystal Equivalent Series Resistance (ESR) Requirements(1)(2)

CRYSTAL FREQUENCY (MHz)

MAXIMUM ESR (Ω)

(CL1 = CL2 = 12 pF)

MAXIMUM ESR (Ω)

(CL1 = CL2 = 24 pF)

110

(1)

Start-up time is dependent on the crystal and tank circuit components. TI recommends that the crystal vendor characterize the

application with the chosen crystal.

Table 5-17. Crystal Oscillator Electrical Characteristics

over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Start-up time(1)

f = 20 MHz

ESR MAX = 50 Ω

CL1 = CL2 = 24 pF

C0 = 7 pF

Crystal drive level (DL)

TMS320F28375DPZP Datasheet(PDF) 67 Page - Texas Instruments

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