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DRV8426PWPR Datasheet(PDF) 24 Page - Texas Instruments |
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DRV8426PWPR Datasheet(HTML) 24 Page - Texas Instruments |
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24 / 49 page ![]() 24 DRV8426 SLOSE55 – MAY 2020 www.ti.com Product Folder Links: DRV8426 Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated Table 10. OFF Time Settings TOFF OFF Time 0 7 µs 1 16 µs Hi-Z 24 µs 330k Ω to GND 32 µs 7.3.6.7 Blanking time After the current is enabled (start of drive phase) in an H-bridge, the current sense comparator is ignored for a period of time (tBLANK) before enabling the current-sense circuitry. The blanking time also sets the minimum drive time of the PWM. The blanking time is approximately 1 µs. 7.3.7 Charge Pump A charge pump is integrated to supply a high-side N-channel MOSFET gate-drive voltage. The charge pump requires a capacitor between the VM and VCP pins to act as the storage capacitor. Additionally a ceramic capacitor is required between the CPH and CPL pins to act as the flying capacitor. Figure 15. Charge Pump Block Diagram |
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