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DRV8426PWPR Datasheet(PDF) 7 Page - Texas Instruments |
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DRV8426PWPR Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 49 page ![]() 7 DRV8426 www.ti.com SLOSE55 – MAY 2020 Product Folder Links: DRV8426 Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated 6.5 Electrical Characteristics Typical values are at TA = 25°C and VVM = 24 V. All limits are over recommended operating conditions, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES (VM, DVDD) IVM VM operating supply current ENABLE = 1, nSLEEP = 1, No motor load 5 6.5 mA IVMQ VM sleep mode supply current nSLEEP = 0 2 4 μA tSLEEP Sleep time nSLEEP = 0 to sleep-mode 120 μs tRESET nSLEEP reset pulse nSLEEP low to clear fault 20 40 μs tWAKE Wake-up time nSLEEP = 1 to output transition 0.8 1.2 ms tON Turn-on time VM > UVLO to output transition 0.8 1.2 ms VDVDD Internal regulator voltage No external load, 6 V < VVM < 33 V 4.5 5 5.5 V CHARGE PUMP (VCP, CPH, CPL) VCP VCP operating voltage VVM + 5 V f(CP) Charge pump switching frequency VVM > UVLO; nSLEEP = 1 360 kHz LOGIC-LEVEL INPUTS (STEP, DIR, nSLEEP) VIL Input logic-low voltage 0 0.6 V VIH Input logic-high voltage 1.5 5.5 V VHYS Input logic hysteresis 150 mV IIL Input logic-low current VIN = 0 V –1 1 μA IIH Input logic-high current VIN = 5 V 100 μA TRI-LEVEL INPUTS (M0, DECAY0, DECAY1, ENABLE) VI1 Input logic-low voltage Tied to GND 0 0.6 V VI2 Input Hi-Z voltage Hi-Z 1.8 2 2.2 V VI3 Input logic-high voltage Tied to DVDD 2.7 5.5 V IO Output pull-up current 10 μA QUAD-LEVEL INPUTS (M1, TOFF) VI1 Input logic-low voltage Tied to GND 0 0.6 V VI2 330k Ω ± 5% to GND 1 1.25 1.4 V VI3 Input Hi-Z voltage Hi-Z 1.8 2 2.2 V VI4 Input logic-high voltage Tied to DVDD 2.7 5.5 V IIL Output pull-up current 10 μA CONTROL OUTPUTS (nFAULT) VOL Output logic-low voltage IO = 5 mA 0.5 V IOH Output logic-high leakage VVM = 24 V –1 1 μA MOTOR DRIVER OUTPUTS (AOUT1, AOUT2, BOUT1, BOUT2) RDS(ONH) High-side FET on resistance VVM = 24 V, TJ = 25 °C, IO = -1 A 450 550 m Ω VVM = 24 V, TJ = 125 °C, IO = -1 A 700 850 m Ω VVM = 24 V, TJ = 150 °C, IO = -1 A 780 950 m Ω RDS(ONL) Low-side FET on resistance VVM = 24 V, TJ = 25 °C, IO = 1 A 450 550 m Ω VVM = 24 V, TJ = 125 °C, IO = 1 A 700 850 m Ω VVM = 24 V, TJ = 150 °C, IO = 1 A 780 950 m Ω tSR Output slew rate VVM = 24 V, IO = 1 A, Between 10% and 90% 240 V/µs PWM CURRENT CONTROL (VREF) KV Transimpedance gain VREF = 3.3 V 2.09 2.2 2.31 V/A tOFF PWM off-time TOFF = 0 7 μs TOFF = 1 16 TOFF = Hi-Z 24 TOFF = 330 kΩ to GND 32 |
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